Research on near-coupling wireless charging ferrite substrate material and application

2020 ◽  
Author(s):  
Yun Wang ◽  
Jianxiao Li ◽  
Qian Liu ◽  
Difei Liang
Keyword(s):  
Substrate Material ◽  
Wireless Charging ◽  
Ferrite Substrate

scholarly journals A compact 5G antenna printed on manganese zinc ferrite substrate material

2016 ◽  
Vol 13 (11) ◽  
pp. 20160377-20160377 ◽  
Author(s):  
Ashiqur Rahman ◽  
Ng M. Yi ◽  
Afaz U. Ahmed ◽  
Touhidul Alam ◽  
Mandeep J. Singh ◽  
...  
Keyword(s):  
Zinc Ferrite ◽  
Substrate Material ◽  
Manganese Zinc ◽  
Manganese Zinc Ferrite ◽  
Ferrite Substrate

scholarly journals Bandwidth Enhancement of Cross-Shaped Fractal Antenna Using Lanthanum Doped Ba-Sr Hexagonal Ferrite As Substrate Material For X-Band Applications

2021 ◽  
Author(s):  
Shally Gujral ◽  
Kamaljit Singh Bhatia ◽  
Harjitpal Singh ◽  
Harsimrat Kaur ◽  
Nancy Gupta
Keyword(s):  
Weather Forecasting ◽  
Solid State Reaction Method ◽  
Substrate Material ◽  
Hexagonal Ferrite ◽  
Antenna Design ◽  
Fractal Antenna ◽  
Antenna Structure ◽  
High Frequency Structure Simulator ◽  
X Band ◽  
Ferrite Substrate

Abstract This paper analyzes and compares the performance of a proposed cross-shaped fractal antenna design with two different substrate materials FR4 epoxy and lanthanum doped Ba-Sr hexagonal ferrite in X-band, where the lanthanum doped Ba-Sr hexagonal ferrite substrate is synthesized based on solid-state reaction method. The proposed antenna design is simulated using HFSS (High frequency structure simulator) version 15. The antenna is intended to work at 10 GHz frequency and involves four iterations. The antenna design is optimized for significant performance parameters viz. return loss, bandwidth, and gain. It provides better results with ferrite substrate as compared to FR4 epoxy substrate and provides − 10 dB broad bandwidth in three frequency regions 6.2969-6.4 GHz, 7.8702-9.44 GHz, and 9.68-9.7746 GHz. The prototype of proposed antenna with FR4 epoxy substrate is fabricated and tested to attain experimental results. The measured results are in good liaison with simulated results. This antenna structure can be considered suitable for RADAR, satellite, microwave communication, and weather forecasting applications in X-Band.

Plasma Sprayed Diffusion Barrier Layers Based on Doped Perovskite-Type LaCrO3 at Substrate-Anode Interface in Solid Oxide Fuel Cells

2006 ◽  
Vol 4 (4) ◽  
pp. 406-412 ◽  
Author(s):  
T. Franco ◽  
Z. HoshiarDin ◽  
P. Szabo ◽  
M. Lang ◽  
G. Schiller
Keyword(s):  
Thermal Expansion ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Substrate Material ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Diffusion Barrier Layer ◽  
Ferrite Substrate ◽  
Plasma Sprayed ◽  
Perovskite Type

In the thin-film solid oxide fuel cell (SOFC) concept of the German Aerospace Center (DLR) in Stuttgart, the entire membrane electrode assembly (MEA) is deposited onto a porous metallic substrate by an integrated multistep vacuum plasma spray (VPS) process. This concept enables the production of very thin and stable electrodes and electrolyte layers with a total cell thickness of only 100–120μm. In this concept, the porous ferrite substrate material predominantly acts as mechanical cell support and as fuel gas distributor. In general, ferrite substrate alloys with high chromium and low manganese content show both excellent corrosion stability and adequate thermal expansion behavior. Nevertheless, at the high process temperature in the SOFC of ∼800°C, atomic transport processes can show a detrimental effect on cell performance, at least at the required long-term operation. Problems arise, in particular, through diffusion processes of Fe-, Cr-, and Ni-species between the Ni/8YSZ anode and the ferrite steel-based substrate material. This can induce significant structure changes both in the anode and the substrate. As a reliable solution of this key problem, a plasma sprayed thin diffusion barrier layer is seen at the interface between anode and substrate, which consists of an electrically conductive and chemically stable ceramic component. For this purpose, some doped perovskite-type LaCrO3, such as La1−xSrxCrO3−δ, La1−xCaxCrO3−δ, or La1−xSrxCr1−yCoyO3−δ were investigated and tested carefully at DLR. These types of perovskites show a high potential to fulfill all the required properties that are needed for the applicability as an anode-side diffusion barrier layer. The paper focuses on basic investigations of differently doped LaCrO3 compounds under SOFC-relevant conditions concerning thermal expansion, electrical conductivity, chemical stability, etc. Furthermore, first results of electrically and electrochemically characterized half cells carried out with some qualified doped LaCrO3 are shown. Finally, the diffusion barrier layer is demonstrated as a new SOFC component that is effective at cell operating conditions.

scholarly journals Performance Enhancement of Metamaterial Loaded Micro Strip Patch Antenna Design Using Gallium Doped Ba-Sr Hexagonal Ferrite as Substrate Material for X-band Applications

2021 ◽  
Author(s):  
Monika Rani ◽  
kamal Jit bhatia ◽  
Harjitpal Singh ◽  
Harsimrat Kaur ◽  
Nancy Gupta
Keyword(s):  
Patch Antenna ◽  
Return Loss ◽  
Performance Enhancement ◽  
Substrate Material ◽  
Performance Comparison ◽  
Hexagonal Ferrite ◽  
Center Frequency ◽  
Antenna Structure ◽  
X Band ◽  
Ferrite Substrate

Abstract An experimental study of microstrip patch antenna designed and fabricated on FR4 epoxy substrate is presented. Further a performance comparison of designed antenna is made with proposed design using Gallium doped Ba-Sr hexagonal ferrite substrate. Microstrip feed line is used for inputting the signal to antenna. The whole simulation is done on HFSS simulator (version 13.0).The center frequency for proposed antenna is 10GHz and is optimized for significant performance parameters viz return loss, bandwidth, VSWR and gain. It was observed that the designed antenna provides better results with ferrite substrate as compared to FR4 epoxy substrate showing -10db broad bandwidth of 4.2GHz in the frequency region 8.2GHz to 12.4GHz. Although, the results of other parameters like return loss, VSWR and gain are found to be optimum with FR4 substrate as compared to mentioned ferrite substrate. The prototype of proposed antenna with FR4 epoxy substrate is fabricated and tested to attain the experimental results. The measured results are found to be better than simulated results. Thus the proposed antenna structure can be considered suitable for microwave communication application in X-band.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Distortion in lattice-resolution scanned-probe microscope images

1993 ◽  
Vol 51 ◽  
pp. 522-523
Author(s):  
L. Fei
Keyword(s):  
Film Studies ◽  
Lattice Structure ◽  
Substrate Material ◽  
Repulsive Force ◽  
Instrument Calibration ◽  
Microscope Images ◽  
Probe Microscope ◽  
Electron Microscopes ◽  
Diffraction Patterns ◽  
Lattice Resolution

Scanned probe microscopes (SPM) have been widely used for studying the structure of a variety material surfaces and thin films. Interpretation of SPM images, however, remains a debatable subject at best. Unlike electron microscopes (EMs) where diffraction patterns and images regularly provide data on lattice spacings and angles within 1-2% and ∽1° accuracy, our experience indicates that lattice distances and angles in raw SPM images can be off by as much as 10% and ∽6°, respectively. Because SPM images can be affected by processes like the coupling between fast and slow scan direction, hysteresis of piezoelectric scanner, thermal drift, anisotropic tip and sample interaction, etc., the causes for such a large discrepancy maybe complex even though manufacturers suggest that the correction can be done through only instrument calibration.We show here that scanning repulsive force microscope (SFM or AFM) images of freshly cleaved mica, a substrate material used for thin film studies as well as for SFM instrument calibration, are distorted compared with the lattice structure expected for mica.

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

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