Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy

Wouter Mortelmans; Salim El Kazzi; Benjamin Groven; Ankit Nalin Mehta; Yashwanth Balaji; Stefan De Gendt; Marc Heyns; Clement Merckling

doi:10.1063/5.0013391

Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy

Applied Physics Letters ◽

10.1063/5.0013391 ◽

2020 ◽

Vol 117 (3) ◽

pp. 033101

Author(s):

Wouter Mortelmans ◽

Salim El Kazzi ◽

Benjamin Groven ◽

Ankit Nalin Mehta ◽

Yashwanth Balaji ◽

...

Keyword(s):

Vapor Phase ◽

Molecular Beam ◽

Van Der Waals

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Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

Advanced Materials Interfaces ◽

10.1002/admi.202100438 ◽

2021 ◽

pp. 2100438

Author(s):

Wouter Mortelmans ◽

Karel De Smet ◽

Ruishen Meng ◽

Michel Houssa ◽

Stefan De Gendt ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Van Der Waals

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Lattice-Boltzmann model for van der Waals fluids with liquid-vapor phase transition

International Journal of Heat and Mass Transfer ◽

10.1016/j.ijheatmasstransfer.2021.121741 ◽

2021 ◽

Vol 179 ◽

pp. 121741

Author(s):

Chunhua Zhang ◽

Hong Liang ◽

Xiaolei Yuan ◽

Gaojie Liu ◽

Zhaoli Guo ◽

...

Keyword(s):

Phase Transition ◽

Vapor Phase ◽

Lattice Boltzmann ◽

Van Der Waals ◽

Lattice Boltzmann Model ◽

Boltzmann Model ◽

Liquid Vapor ◽

Van Der Waals Fluids

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Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.08.047 ◽

2016 ◽

Vol 456 ◽

pp. 121-132 ◽

Cited By ~ 19

Author(s):

D.F. Storm ◽

M.T. Hardy ◽

D.S. Katzer ◽

N. Nepal ◽

B.P. Downey ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Molecular Beam ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

Critical Issues

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Lead microclusters in the vapor phase as studied by molecular beam electron diffraction: Vestige of amorphous structure

The Journal of Chemical Physics ◽

10.1063/1.436235 ◽

1978 ◽

Vol 68 (8) ◽

pp. 3766-3773 ◽

Cited By ~ 19

Author(s):

Akimichi Yokozeki

Keyword(s):

Electron Diffraction ◽

Vapor Phase ◽

Molecular Beam ◽

Amorphous Structure ◽

Beam Electron

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Molecular beam infrared laser photodissociation of van der Waals molecules containing sulfur hexafluoride

The Journal of Physical Chemistry ◽

10.1021/j100408a040 ◽

1986 ◽

Vol 90 (17) ◽

pp. 4026-4032 ◽

Cited By ~ 38

Author(s):

T. E. Gough ◽

D. G. Knight ◽

P. A. Rowntree ◽

G. Scoles

Keyword(s):

Molecular Beam ◽

Sulfur Hexafluoride ◽

Van Der Waals ◽

Infrared Laser ◽

Van Der Waals Molecules

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Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.10.082 ◽

2004 ◽

Vol 262 (1-4) ◽

pp. 145-150 ◽

Cited By ~ 33

Author(s):

V. Potin ◽

E. Hahn ◽

A. Rosenauer ◽

D. Gerthsen ◽

B. Kuhn ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Vapor Phase ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures

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Electron irradiation induced defects and schottky diode characteristics for metalorganic vapor phase epitaxy and molecular beam epitaxial n-GaAs

Journal of Electronic Materials ◽

10.1007/bf02659720 ◽

1995 ◽

Vol 24 (1) ◽

pp. 15-20 ◽

Cited By ~ 6

Author(s):

G. H. Yousefi ◽

J. B. Webb ◽

R. Rousina ◽

S. M. Khanna

Keyword(s):

Vapor Phase ◽

Schottky Diode ◽

Electron Irradiation ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Molecular Beam Epitaxial ◽

Induced Defects ◽

Irradiation Induced Defects

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A calculational procedure for estimating equilibrium angles and bending force constants for van der Waals molecules from precision molecular beam electric resonance data

Journal of Molecular Spectroscopy ◽

10.1016/0022-2852(86)90191-8 ◽

1986 ◽

Vol 118 (2) ◽

pp. 550-552 ◽

Cited By ~ 3

Author(s):

Stewart E. Novick

Keyword(s):

Molecular Beam ◽

Van Der Waals ◽

Force Constants ◽

Electric Resonance ◽

Van Der Waals Molecules ◽

Bending Force ◽

Calculational Procedure ◽

Resonance Data

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Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.336937 ◽

1986 ◽

Vol 59 (8) ◽

pp. 2828-2832 ◽

Cited By ~ 18

Author(s):

S. Zemon ◽

P. Norris ◽

E. S. Koteles ◽

G. Lambert

Keyword(s):

Magnetic Field ◽

Molecular Beam Epitaxy ◽

Vapor Phase ◽

Applied Magnetic Field ◽

Molecular Beam ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Undoped Gaas

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Growth modes of organic semiconductor thin films using organic molecular beam deposition: epitaxy, van der Waals epitaxy, and quasi-epirtaxy

Supramolecular Science ◽

10.1016/s0968-5677(96)00053-3 ◽

1997 ◽

Vol 4 (1-2) ◽

pp. 127-139 ◽

Cited By ~ 23

Author(s):

S.R. Forrest ◽

P.E. Burrows

Keyword(s):

Thin Films ◽

Organic Semiconductor ◽

Molecular Beam ◽

Van Der Waals ◽

Growth Modes ◽

Semiconductor Thin Films ◽

Molecular Beam Deposition ◽

Beam Deposition

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