scholarly journals Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

2020 ◽  
Vol 128 (5) ◽  
pp. 055304
Author(s):  
Nao Harada ◽  
Alban Ferrier ◽  
Diana Serrano ◽  
Mauro Persechino ◽  
Emrick Briand ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemically Vapor Deposited

Microstructural defects in GaN thin films grown on chemically vapor-deposited graphene layers

2013 ◽  
Vol 102 (5) ◽  
pp. 051908 ◽  
Author(s):  
Hyobin Yoo ◽  
Kunook Chung ◽  
Suk In Park ◽  
Miyoung Kim ◽  
Gyu-Chul Yi
Keyword(s):  
Thin Films ◽  
Graphene Layers ◽  
Microstructural Defects ◽  
Chemically Vapor Deposited

Resistivity and Hall Voltage Investigation of Phosphorus Segregation in Polycrystalline Si1-xGex Thin Films

2000 ◽  
Vol 609 ◽  
Author(s):  
W. Qin ◽  
D. G. Ast ◽  
T. I. Kamins
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Atmospheric Pressure ◽  
Temperature Measurements ◽  
Hall Voltage ◽  
Phosphorus Segregation ◽  
Dopant Segregation ◽  
Hall Measurements ◽  
Chemically Vapor Deposited

ABSTRACTDopant segregation in atmospheric-pressure, chemically vapor deposited (APCVD), ~300 nm thick, polycrystalline Si0.95Ge0.5 and Si0.9Ge0.1 thin films, implanted at 80 KeV with 6×1013 to 5×1014 P/cm2 and annealed at 800 °C for 1 hr, was investigated using a combination of Hall and conductivity vs. temperature measurements. Hall measurements, feasible only in heavier doped films, showed that 29% of the phosphorus in Si0.9Ge0.1 and 42% of phosphorus in Si0.95Ge0.05 was electrically inactive. The loss was attributed to dopant segregating to grain boundaries. The density of grain boundaries states was also found to increase slightly with increasing Ge content, from 3.6×1012/cm2 in Si0.95Ge0.05 to 4.4×1012/cm2 in Si0.9Ge0.1.

Tungsten Oxide Thin Films Chemically Vapor Deposited at Low Pressure by  W  (  CO  ) 6 Pyrolysis

1997 ◽  
Vol 144 (2) ◽  
pp. 595-599 ◽  
Author(s):  
D. Davazoglou ◽  
A. Moutsakis ◽  
V. Valamontes ◽  
V. Psycharis ◽  
D. Tsamakis
Keyword(s):  
Thin Films ◽  
Tungsten Oxide ◽  
Low Pressure ◽  
Oxide Thin Films ◽  
Tungsten Oxide Thin Films ◽  
Chemically Vapor Deposited

Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing

2002 ◽  
Vol 80 (13) ◽  
pp. 2368-2370 ◽  
Author(s):  
Byoung Keon Park ◽  
Jaehoo Park ◽  
Moonju Cho ◽  
Cheol Seong Hwang ◽  
Kiyoung Oh ◽  
...  
Keyword(s):  
Thin Films ◽  
Interfacial Reaction ◽  
Film Growth ◽  
Si Substrate ◽  
Chemically Vapor Deposited

Preparation and characterization of low pressure chemically vapor deposited silicon nitride thin films from tris(diethylamino)chlorosilane and ammonia

2005 ◽  
Vol 479 (1-2) ◽  
pp. 137-143 ◽  
Author(s):  
Xue-Jian Liu ◽  
Yao-Feng Chen ◽  
Hui-Li Li ◽  
Xing-Wei Sun ◽  
Li-Ping Huang
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Low Pressure ◽  
Chemically Vapor Deposited
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