Microstructural defects in GaN thin films grown on chemically vapor-deposited graphene layers

2013 ◽  
Vol 102 (5) ◽  
pp. 051908 ◽  
Author(s):  
Hyobin Yoo ◽  
Kunook Chung ◽  
Suk In Park ◽  
Miyoung Kim ◽  
Gyu-Chul Yi
Keyword(s):  
Thin Films ◽  
Graphene Layers ◽  
Microstructural Defects ◽  
Chemically Vapor Deposited

Growth of graphene layers for thin films

2011 ◽  
pp. 211-227
Author(s):  
B.H. Hong ◽  
H.R. Jeon
Keyword(s):  
Thin Films ◽  
Graphene Layers

scholarly journals Characterisation of thin films of graphene–surfactant composites produced through a novel semi-automated method

2016 ◽  
Vol 7 ◽  
pp. 209-219 ◽  
Author(s):  
Nik J Walch ◽  
Alexei Nabok ◽  
Frank Davis ◽  
Séamus P J Higson
Keyword(s):  
Thin Films ◽  
Total Internal Reflection ◽  
Sodium Dodecyl ◽  
Layer By Layer ◽  
Graphene Layers ◽  
Langmuir Blodgett ◽  
Stable Suspension ◽  
Automated Method ◽  
Graphene Flakes ◽  
Deposition Techniques

In this paper we detail a novel semi-automated method for the production of graphene by sonochemical exfoliation of graphite in the presence of ionic surfactants, e.g., sodium dodecyl sulfate (SDS) and cetyltrimethylammonium bromide (CTAB). The formation of individual graphene flakes was confirmed by Raman spectroscopy, while the interaction of graphene with surfactants was proven by NMR spectroscopy. The resulting graphene–surfactant composite material formed a stable suspension in water and some organic solvents, such as chloroform. Graphene thin films were then produced using Langmuir–Blodgett (LB) or electrostatic layer-by-layer (LbL) deposition techniques. The composition and morphology of the films produced was studied with SEM/EDX and AFM. The best results in terms of adhesion and surface coverage were achieved using LbL deposition of graphene(−)SDS alternated with polyethyleneimine (PEI). The optical study of graphene thin films deposited on different substrates was carried out using UV–vis absorption spectroscopy and spectroscopic ellipsometry. A particular focus was on studying graphene layers deposited on gold-coated glass using a method of total internal reflection ellipsometry (TIRE) which revealed the enhancement of the surface plasmon resonance in thin gold films by depositing graphene layers.

scholarly journals Correction: Microstructures of GaN Thin Films Grown on Graphene Layers

2012 ◽  
Vol 24 (14) ◽  
pp. 1780-1780 ◽  
Author(s):  
Hyobin Yoo ◽  
Kunook Chung ◽  
Yong Seok Choi ◽  
Chan Soon Kang ◽  
Kyu Hwan Oh ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Layers

Resistivity and Hall Voltage Investigation of Phosphorus Segregation in Polycrystalline Si1-xGex Thin Films

2000 ◽  
Vol 609 ◽  
Author(s):  
W. Qin ◽  
D. G. Ast ◽  
T. I. Kamins
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Atmospheric Pressure ◽  
Temperature Measurements ◽  
Hall Voltage ◽  
Phosphorus Segregation ◽  
Dopant Segregation ◽  
Hall Measurements ◽  
Chemically Vapor Deposited

ABSTRACTDopant segregation in atmospheric-pressure, chemically vapor deposited (APCVD), ~300 nm thick, polycrystalline Si0.95Ge0.5 and Si0.9Ge0.1 thin films, implanted at 80 KeV with 6×1013 to 5×1014 P/cm2 and annealed at 800 °C for 1 hr, was investigated using a combination of Hall and conductivity vs. temperature measurements. Hall measurements, feasible only in heavier doped films, showed that 29% of the phosphorus in Si0.9Ge0.1 and 42% of phosphorus in Si0.95Ge0.05 was electrically inactive. The loss was attributed to dopant segregating to grain boundaries. The density of grain boundaries states was also found to increase slightly with increasing Ge content, from 3.6×1012/cm2 in Si0.95Ge0.05 to 4.4×1012/cm2 in Si0.9Ge0.1.

Tungsten Oxide Thin Films Chemically Vapor Deposited at Low Pressure by  W  (  CO  ) 6 Pyrolysis

1997 ◽  
Vol 144 (2) ◽  
pp. 595-599 ◽  
Author(s):  
D. Davazoglou ◽  
A. Moutsakis ◽  
V. Valamontes ◽  
V. Psycharis ◽  
D. Tsamakis
Keyword(s):  
Thin Films ◽  
Tungsten Oxide ◽  
Low Pressure ◽  
Oxide Thin Films ◽  
Tungsten Oxide Thin Films ◽  
Chemically Vapor Deposited
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