Electron beam irradiation effect on polymer blend electrolyte films: Thermal and conductivity studies

2020 ◽  
Author(s):  
Lakshmayya guddi Yesappa ◽  
Shankar Pawar Ashokkumar ◽  
Hebri Vijeth ◽  
Molahalli Vandana ◽  
Mahadevappa Basappa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Polymer Blend ◽  
Electron Beam Irradiation ◽  
Irradiation Effect ◽  
Beam Irradiation ◽  
Polymer Blend Electrolyte

scholarly journals Low-energy electron beam irradiation effect on Al/SiO2/Si structure voltage-farad characteristics

2019 ◽  
Vol 22 (2) ◽  
pp. 112-117
Author(s):  
Yu. O. Kulanchikov ◽  
P. S. Vergeles ◽  
E. B. Yakimov
Keyword(s):  
Electron Beam ◽  
Carrier Transport ◽  
Electron Beam Irradiation ◽  
Irradiation Effect ◽  
Beam Irradiation ◽  
Dielectric Thickness ◽  
Mos Structure ◽  
Trap Formation ◽  
Positive Voltage ◽  
Low Energy Electron

The effect of electron irradiation with energy of 2.5 keV on the MOS structure Al/SiO2/Si capacitance-voltage (C-V) characteristics have been studied. At chosen beam energy the electron penetration depth is lower than the dielectric thickness that allows to reveal the contribution of excess carrier transport to the trap formation on the SiO2/Si interface. It was established that the electron beam irradiation leads to a significant change in the C-V characteristics slope, i.e. to to the trap formation at the interface. A study of effect of bias applied to the investigated structure before and during the electron beam irradiation was carried out. It was established that while the bias applied before irradiation practically did not affect the C-V characteristics of the investigated MOS structure, the positive voltage applied to metallization during irradiation produced a pronounced effect on the C-V curve changes. At the same time the C-V characteristics after irradiation with zero and negative voltage were very similar. The investigation of stability of changes produced by the electron beam irradiation showed that the C-V curves are slowly restored even at room temperature. An applied negative bias was found to slow down the charge relaxation process.

scholarly journals Faceting–roughening transition of a Cu grain boundary under electron-beam irradiation at 300 keV

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sung Bo Lee ◽  
Heung Nam Han
Keyword(s):  
Electron Beam ◽  
Grain Boundary ◽  
Current Density ◽  
Electron Beam Irradiation ◽  
Structural Evolution ◽  
Irradiation Effect ◽  
Beam Irradiation ◽  
Roughening Transition ◽  
Transmission Electron ◽  
Scattering Effects

AbstractIn this study, we examined the beam-irradiation effect on the structural evolution of the grain boundary (GB) in a Cu bicrystal at room temperature using a Cs-corrected, monochromated transmission electron microscope at an acceleration voltage of 300 keV. Faceting of the GB was observed at a low current density of the electron beam. With increasing current density, the GB became defaceted. The faceting–roughening transition was shown to be reversible, as the process was reversed upon decreasing the current density. The structural transition is explained by inelastic scattering effects by electron-beam irradiation.

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