Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

2020 ◽  
Vol 116 (21) ◽  
pp. 212102 ◽  
Author(s):  
Y. H. Sun ◽  
F. J. Xu ◽  
N. Xie ◽  
J. M. Wang ◽  
N. Zhang ◽  
...  
Keyword(s):  
Active Region ◽  
Ultraviolet Light ◽  
High Efficiency ◽  
Dual Band ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Band Emission ◽  
Deep Ultraviolet

Nearly Efficiency-Droop-Free AlGaN-Based Deep-Ultraviolet Light-Emitting Diode Without Electron-Blocking Layer

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
Hongfeng Jia ◽  
Huabin Yu ◽  
Zhongjie Ren ◽  
Chong Xing ◽  
Zhongling Liu ◽  
...  
Keyword(s):  
Active Region ◽  
Ultraviolet Light ◽  
Light Output ◽  
Efficiency Droop ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Device Architecture ◽  
Duv Led ◽  
Deep Ultraviolet

Abstract An aluminum-rich AlGaN layer is commonly implemented to act as an electron-blocking layer (EBL) to block electron overflow from the active region in the conventional deep-ultraviolet light-emitting diodes (DUV LEDs). Herein, we propose a DUV LED device architecture with specially designed band-engineered quantum barriers (QBs) to “serve” as an alternative approach to alleviate such overflow effect, suppressing the electron leakage, and facilitating the electron and hole injection into the active region for efficient radiative recombination. Intriguingly, a much smaller efficiency droop with a significant enhancement of light output power (LOP) by nearly 50% can be achieved at the injection current level of 120 mA in such EBL-free device, in comparison with the conventional EBL-incorporated DUV LED structure. Thus, the EBL-free device architecture provides us an alternative path toward the realization of efficient DUV light emitters.

Proposed design principle of fluoride-based materials for deep ultraviolet light emitting devices

2007 ◽  
Vol 30 (1) ◽  
pp. 15-17 ◽  
Author(s):  
Nobuhiko Sarukura ◽  
Hidetoshi Murakami ◽  
Elmer Estacio ◽  
Shingo Ono ◽  
Riadh El Ouenzerfi ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Design Principle ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Ultraviolet

scholarly journals Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 420 ◽  
Author(s):  
Yung-Min Pai ◽  
Chih-Hao Lin ◽  
Chun-Fu Lee ◽  
Chun-Peng Lin ◽  
Cheng-Huan Chen ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Light Power ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

2004 ◽  
Vol 84 (23) ◽  
pp. 4762-4764 ◽  
Author(s):  
V. Adivarahan ◽  
S. Wu ◽  
J. P. Zhang ◽  
A. Chitnis ◽  
M. Shatalov ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
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