Proposed design principle of fluoride-based materials for deep ultraviolet light emitting devices

Nobuhiko Sarukura; Hidetoshi Murakami; Elmer Estacio; Shingo Ono; Riadh El Ouenzerfi; Marilou Cadatal; Takeshi Nishimatsu; Noriaki Terakubo; Hiroshi Mizuseki; Yoshiyuki Kawazoe; Akira Yoshikawa; Tsuguo Fukuda

doi:10.1016/j.optmat.2006.11.031

Proposed design principle of fluoride-based materials for deep ultraviolet light emitting devices

Optical Materials ◽

10.1016/j.optmat.2006.11.031 ◽

2007 ◽

Vol 30 (1) ◽

pp. 15-17 ◽

Cited By ~ 38

Author(s):

Nobuhiko Sarukura ◽

Hidetoshi Murakami ◽

Elmer Estacio ◽

Shingo Ono ◽

Riadh El Ouenzerfi ◽

...

Keyword(s):

Ultraviolet Light ◽

Design Principle ◽

Light Emitting ◽

Light Emitting Devices ◽

Deep Ultraviolet

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Development of High Power, Large Area, Deep Ultraviolet Light Emitting Devices Using Dynamic Microplasma Excitation (MIPE) of AlGaN Multiple Quantum Wells

Electronics and Communications in Japan ◽

10.1002/ecj.11768 ◽

2016 ◽

Vol 99 (7) ◽

pp. 3-11 ◽

Cited By ~ 1

Author(s):

NORIKO KUROSE ◽

YOSHINOBU AOYAGI

Keyword(s):

Quantum Wells ◽

Ultraviolet Light ◽

High Power ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Large Area ◽

Light Emitting ◽

Light Emitting Devices ◽

Deep Ultraviolet

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Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission

Applied Physics Letters ◽

10.1063/5.0008339 ◽

2020 ◽

Vol 116 (21) ◽

pp. 212102 ◽

Cited By ~ 2

Author(s):

Y. H. Sun ◽

F. J. Xu ◽

N. Xie ◽

J. M. Wang ◽

N. Zhang ◽

...

Keyword(s):

Active Region ◽

Ultraviolet Light ◽

High Efficiency ◽

Dual Band ◽

Light Emitting ◽

Light Emitting Devices ◽

Band Emission ◽

Deep Ultraviolet

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ZnO-based deep-ultraviolet light-emitting devices

Chinese Physics B ◽

10.1088/1674-1056/26/4/047703 ◽

2017 ◽

Vol 26 (4) ◽

pp. 047703 ◽

Cited By ~ 19

Author(s):

Ying-Jie Lu ◽

Zhi-Feng Shi ◽

Chong-Xin Shan ◽

De-Zhen Shen

Keyword(s):

Ultraviolet Light ◽

Light Emitting ◽

Light Emitting Devices ◽

Deep Ultraviolet

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265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions

Applied Physics Express ◽

10.35848/1882-0786/abb86f ◽

2020 ◽

Vol 13 (10) ◽

pp. 102005 ◽

Cited By ~ 2

Author(s):

Ryota Ishii ◽

Akira Yoshikawa ◽

Kazuhiro Nagase ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Selective Excitation ◽

Photoluminescence Spectroscopy ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes ◽

Excitation Conditions

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Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.200903400 ◽

2010 ◽

Vol 4 (1-2) ◽

pp. 49-51 ◽

Cited By ~ 8

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Adam Moldawer ◽

Wei Zhang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

IEEE Photonics Journal ◽

10.1109/jphot.2020.3047846 ◽

2021 ◽

Vol 13 (1) ◽

pp. 1-8

Author(s):

J. Lang ◽

F. J. Xu ◽

Y. H. Sun ◽

N. Zhang ◽

J. M. Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Velocity Modulation ◽

Deep Ultraviolet ◽

Carrier Velocity ◽

Ultraviolet Light Emitting Diodes

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Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Optik ◽

10.1016/j.ijleo.2021.166528 ◽

2021 ◽

Vol 232 ◽

pp. 166528

Author(s):

Muhammad Usman ◽

Tariq Jamil ◽

Shahzeb Malik ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes

Optics Express ◽

10.1364/oe.25.00a639 ◽

2017 ◽

Vol 25 (16) ◽

pp. A639 ◽

Cited By ~ 20

Author(s):

Guo-Dong Hao ◽

Naoki Tamari ◽

Toshiyuki Obata ◽

Toru Kinoshita ◽

Shin-ichiro Inoue

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Current Injection ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.05.010 ◽

2015 ◽

Vol 85 ◽

pp. 59-66 ◽

Cited By ~ 13

Author(s):

Pai Sun ◽

Xianglong Bao ◽

Songqing Liu ◽

Chunya Ye ◽

Zhaorong Yuan ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes

Journal of Applied Physics ◽

10.1063/5.0042712 ◽

2021 ◽

Vol 129 (13) ◽

pp. 133102

Author(s):

Hongfeng Jia ◽

Huabin Yu ◽

Yang Kang ◽

Zhongjie Ren ◽

Muhammad Hunain Memon ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Quantum Structure ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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