Local initial heteroepitaxial growth of diamond (111) on Ru (0001)/c-sapphire by antenna-edge-type microwave plasma chemical vapor deposition

2020 ◽  
Vol 117 (11) ◽  
pp. 112102
Author(s):  
Wenxi Fei ◽  
Kongting Wei ◽  
Aoi Morishita ◽  
Hongxing Wang ◽  
Hiroshi Kawarada
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Edge Type ◽  
Plasma Chemical Vapor Deposition

Self-Organized Microcones Grown on Si Substrate by Microwave Plasma Chemical Vapor Deposition

2008 ◽  
Vol 47 (4) ◽  
pp. 3050-3052
Author(s):  
Masataka Moriya ◽  
Yuji Matsumoto ◽  
Yoshinao Mizugaki ◽  
Tadayuki Kobayashi ◽  
Kouichi Usami
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Self Organized

Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition

2000 ◽  
Vol 9 (7) ◽  
pp. 545-549
Author(s):  
Zhang Yong-ping ◽  
Gu You-song ◽  
Chang Xiang-rong ◽  
Tian Zhong-zhuo ◽  
Shi Dong-xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Lateral outward growth of single-crystal diamond by two different structures of microwave plasma reactors

CrystEngComm ◽  
2022 ◽  
Author(s):  
Wei Cao ◽  
Zhibin Ma ◽  
Hongyang Zhao ◽  
Deng Gao ◽  
Qiuming Fu
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Lateral Growth ◽  
Plasma Reactors ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

On a semi-open holder, the homoepitaxial lateral growth of single-crystal diamond (SCD) was carried out via microwave plasma chemical vapor deposition (MPCVD). By tuning and optimizing two different structures of...

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weihua Wang ◽  
Bing Dai ◽  
Guoyang Shu ◽  
Yang Wang ◽  
Benjian Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Bias Voltage ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
High Density ◽  
Plasma Chemical ◽  
Diamond Nucleation ◽  
Plasma Chemical Vapor Deposition

Diamond nucleation on iridium (001) substrates was investigated under different bias conditions. High-density epitaxial nucleation can be obtained in a narrow bias window. This paper reports both the typical nucleation...

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