scholarly journals AC measurement of the Nernst effect of thin films at low temperatures

2020 ◽  
Vol 91 (9) ◽  
pp. 095112
Author(s):  
Y. Wu ◽  
S. Dutta ◽  
J. Jesudasan ◽  
A. Frydman ◽  
A. Roy
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Nernst Effect ◽  
Ac Measurement

ANOMALOUS MAGNETIZATION PROCESSES AT LOW TEMPERATURES IN COMPOSITIONALLY MODULATED Co/Mn THIN FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1753-C8-1754
Author(s):  
H. Sakakima ◽  
M. Tessier ◽  
R. Krishnan ◽  
E. Hirota
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Magnetization Processes

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition

Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1−x)O3 thin films at 90–150 °C

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
High Dielectric Constant ◽  
Ambient Pressure ◽  
Random Access ◽  
Random Access Memory ◽  
Molar Ratio ◽  
Access Memory ◽  
Eds Analysis ◽  
High Dielectric

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

Oxygen Effect in Diamond Deposition at Low Temperatures

1989 ◽  
Vol 162 ◽  
Author(s):  
Y. Liou ◽  
A. Inspektor ◽  
R. Weimer ◽  
D. Knight ◽  
R. Messier
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Gas Mixtures ◽  
Diamond Growth ◽  
Oxygen Effect ◽  
Gas Mixture ◽  
Diamond Thin Films ◽  
Deposited Films

ABSTRACTDiamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

Sol-gel-hydrothermal growth of oxide thin films at low temperatures

2000 ◽  
Vol 80 (2) ◽  
pp. 119-124
Author(s):  
Jianming Zeng ◽  
Chenglu Lin ◽  
Zhitang Song ◽  
Kun Li ◽  
Jinhua Li
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Sol Gel ◽  
Hydrothermal Growth ◽  
Oxide Thin Films

Wet Imprinting of Channel-Type Superstructures in Nanostructured Titania Thin Films at Low Temperatures for Hybrid Solar Cells

ChemSusChem ◽  
2018 ◽  
Vol 11 (7) ◽  
pp. 1179-1186 ◽  
Author(s):  
Lin Song ◽  
Tianyi Wang ◽  
Volker Körstgens ◽  
Weijia Wang ◽  
Nitin Saxena ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperatures ◽  
Hybrid Solar Cells ◽  
Nanostructured Titania ◽  
Channel Type
Sign in / Sign up

Export Citation Format

Share Document