scholarly journals Low-power transimpedance amplifier for cryogenic integration with quantum devices

2020 ◽  
Vol 7 (4) ◽  
pp. 041407
Author(s):  
L. Le Guevel ◽  
G. Billiot ◽  
B. Cardoso Paz ◽  
M. L. V. Tagliaferri ◽  
S. De Franceschi ◽  
...  
Keyword(s):  
Low Power ◽  
Transimpedance Amplifier ◽  
Quantum Devices

A CMOS Low-Noise and Low-Power Transimpedance Amplifier

2021 ◽  
Author(s):  
Mehrdad Amirkhan Dehkordi ◽  
Seyed Mehdi Mirsanei ◽  
Soorena Zohoori
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Transimpedance Amplifier

A low-power BiCMOS 50 Gbps Gm-boosted dual-feedback transimpedance amplifier

2015 ◽  
Author(s):  
Hossein Mohammadnezhad ◽  
Alireza Karimi Bidhendi ◽  
Michael M. Green ◽  
Payam Heydari
Keyword(s):  
Low Power ◽  
Transimpedance Amplifier

Frequency-Compensated Bulk-Driven TIA Suitable for Low-Voltage Low-Power Applications

2020 ◽  
pp. 2150121
Author(s):  
Urvashi Bansal ◽  
Maneesha Gupta ◽  
Niranjan Raj
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Transimpedance Amplifier ◽  
Frequency Compensation ◽  
Suitable Alternative ◽  
Small Signal Analysis ◽  
Cmos Design ◽  
Spiral Inductors ◽  
Compensation Technique ◽  
Good Agreement

The importance of a transimpedance amplifier in an optical transceiver is very well known. In this paper, a novel CMOS design of the bulk-driven transimpedance amplifier (BD-TIA) is given where the bridge-shunt peaking-based frequency compensation technique is exploited to improve frequency response. A pre-existing active inductor has been used for the same. The electrical characteristics and functioning of this inductor simulator make it a suitable alternative to both floating and grounded spiral inductors. In order to verify the workability of the proposed circuit, it has been simulated with TSMC CMOS 0.18[Formula: see text][Formula: see text]m process parameters. The proposed circuit is useful in low-voltage low-power VLSI applications as it uses a single supply of 0.75[Formula: see text]V. The power consumption of BD-TIA is very low, being 0.37[Formula: see text]mW, because a standard MOSFET has been replaced by a bulk-driven MOSFET (BDMOS), while the 3-dB bandwidth is observed to be 4.5[Formula: see text]GHz. The mathematical investigation and small signal analysis show that the simulation results are in good agreement.

Sign in / Sign up

Export Citation Format

Share Document