scholarly journals Numerical analysis of the effect of surface recombination on N-atom in discharge and post-discharge region

2020 ◽  
Vol 27 (6) ◽  
pp. 063502
Author(s):  
Sen Li ◽  
Xiaobing Wang ◽  
Yang Liu ◽  
Qinglin Cheng ◽  
Bin Bian ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
Surface Recombination ◽  
Discharge Region ◽  
Post Discharge ◽  
Effect Of Surface

scholarly journals NH and CN radical emission from corona post discharge region in high density nitrogen plasma

2019 ◽  
Vol 509 ◽  
pp. 012084
Author(s):  
Muhammad Nur ◽  
Nelly Bonifaci ◽  
Andre Denat ◽  
Vlademir M. Atrazhev
Keyword(s):  
Nitrogen Plasma ◽  
High Density ◽  
Discharge Region ◽  
Post Discharge

Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers

2013 ◽  
Vol 740-742 ◽  
pp. 490-493
Author(s):  
Jian Wu Sun ◽  
Satoshi Kamiyama ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi
Keyword(s):  
Diffusion Coefficient ◽  
Numerical Simulations ◽  
Carrier Lifetime ◽  
Surface Recombination ◽  
Experimental Results ◽  
Surface And Interface ◽  
Carrier Lifetimes ◽  
Interface Recombination ◽  
Photoconductivity Decay ◽  
Effect Of Surface

Carrier lifetimes in 6H-SiC epilayers were investigated by using numerical simulations and micro-wave photoconductivity decay measurements. The measured carrier lifetimes were significantly increasing with an increased thickness up to 200 μm while it stays almost constant in layers thicker than 200 μm. From a comparison of the simulation and experimental results, we found that if the bulk lifetime in 6H-SiC is around a few microseconds, both the surface recombination and interface recombination influence the carrier lifetime in layers with thickness less than 200 μm while only the surface recombination determines the carrier lifetime in layers with thickness more than 200 μm. In samples with varying thicknesses, a bulk lifetime = 2.93 μs and carrier diffusion coefficient D= 2.87 cm2/s were derived from the linear fitting of reciprocal lifetime vs reciprocal square thickness.

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