p-type conduction mechanism in continuously varied non-stoichimetric SnOx thin films deposited by reactive sputtering with the impedance control

2020 ◽  
Vol 127 (18) ◽  
pp. 185703
Author(s):  
Junjun Jia ◽  
Takumi Sugane ◽  
Shin-ichi Nakamura ◽  
Yuzo Shigesato
2019 ◽  
Vol 100 (11) ◽  
Author(s):  
X. C. Huang ◽  
J. Y. Zhang ◽  
M. Wu ◽  
S. Zhang ◽  
H. Y. Xiao ◽  
...  

2007 ◽  
Vol 280-283 ◽  
pp. 315-318 ◽  
Author(s):  
Chong Liang ◽  
De An Yang ◽  
Jian Jing Song ◽  
Ming Xia Xu

Sr(NO3)2, Fe(NO3)3 and citric acid (the mole ratio was 1:1:2) were mixed in water to form sol. Alumina substrate, which had been treated by ultrasonic cleaner, were dipped in the sol and pulled out, and the coating film was heated for 1h at 900oC. Through seventeen times treatment, SrFeO3-d thin film was coated on the alumina substrate. The remainder sol was dried and heated at 400oC, 800oC, 900oC for 2 h. The thin films and the powders were characterized by XRD. The morphologies of thin films were observed by SEM. The results showed that SrFeO3-δ was formed at 900oC on alumina substrate and the grain size was 100 ~ 200 nm. The oxygen sensitivity was measured in the temperature range of 377 ~ 577oC under different oxygen partial pressures. SrFeO3-δ thin film showed p-type conduction. The response time was less than 2 min when being exposed to a change from N2 to 0.466% O2 at 377oC.


2007 ◽  
Vol 91 (23) ◽  
pp. 232115 ◽  
Author(s):  
Y. F. Li ◽  
B. Yao ◽  
Y. M. Lu ◽  
Z. P. Wei ◽  
Y. Q. Gai ◽  
...  
Keyword(s):  
P Type ◽  

2013 ◽  
Vol 566 ◽  
pp. 179-183
Author(s):  
Shinya Hikita ◽  
Teppei Hayashi ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

Thin films of a composite of molybdenum disilicide (MoSi2) and silicon (Si) were fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si with a Si-to-Mo molar ratio of 1:X (2.0 X 2.5). The Hall coefficients were measured to identify the conduction mechanisms in the thin films. The sign and magnitude of the Hall coefficients revealed that thin films with X = 2.02.2 having a hexagonal crystal structure showed p-type conduction, while the mechanism for the n-type film with X = 2.33 was unknown and that for a composite of hexagonal and an unknown structure with X = 2.3, 2.4 and 2.5 showed mixed conduction.


2003 ◽  
Vol 93 (1) ◽  
pp. 396-399 ◽  
Author(s):  
A. V. Singh ◽  
R. M. Mehra ◽  
A. Wakahara ◽  
A. Yoshida

2013 ◽  
Vol 103 (7) ◽  
pp. 072109 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
Vishnu Awasthi ◽  
M. Gupta ◽  
U. P. Deshpande ◽  
...  

2013 ◽  
Vol 48 (3) ◽  
pp. 1239-1243 ◽  
Author(s):  
Y. Ma ◽  
Q. Gao ◽  
G.G. Wu ◽  
W.C. Li ◽  
F.B. Gao ◽  
...  

2018 ◽  
Vol 30 (2) ◽  
pp. 1366-1373 ◽  
Author(s):  
D. E. Guzmán-Caballero ◽  
M. A. Quevedo-López ◽  
R. Ramírez-Bon

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