scholarly journals Carrier recombination parameters in diamond after surface boron implantation and annealing

2020 ◽  
Vol 127 (24) ◽  
pp. 245707 ◽  
Author(s):  
P. Grivickas ◽  
P. Ščajev ◽  
N. Kazuchits ◽  
A. Mazanik ◽  
O. Korolik ◽  
...  
Keyword(s):  
Carrier Recombination ◽  
Boron Implantation

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Recombination of Optically Excited Carriers in a-Si:H at Low temperatures and Intermediate Times

2002 ◽  
Vol 715 ◽  
Author(s):  
J. Whitaker ◽  
T. Su ◽  
P. C. Taylor
Keyword(s):  
Electron Spin Resonance ◽  
Low Temperatures ◽  
Lattice Relaxation ◽  
Spin Lattice Relaxation ◽  
Dipolar Relaxation ◽  
Spin Lattice ◽  
Carrier Recombination ◽  
Nmr Data ◽  
Spin Resonance ◽  
Time Regime

AbstractOptically induced electron spin resonance (LESR) studies on time scales in between the previously published PL and LESR results (approximately 10 ms to 10 s) allow one to examine the cross over between energy-loss (downward) hopping of carriers and carrier recombination via tunneling. In addition, data in this time regime are directly compared in the same sample with NMR data on the dipolar spin-lattice relaxation of the bonded hydrogen where light induced electrons and holes are responsible for dipolar relaxation of bonded hydrogen. The LESR results confirm the interpretation of the NMR measurements.

scholarly journals Design of Grating Al2O3 Passivation Structure Optimized for High-Efficiency Cu(In,Ga)Se2 Solar Cells

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4849
Author(s):  
Chan Hyeon Park ◽  
Jun Yong Kim ◽  
Shi-Joon Sung ◽  
Dae-Hwan Kim ◽  
Yun Seon Do
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Rear Surface ◽  
Maximum Efficiency ◽  
Structural Factors ◽  
Carrier Recombination ◽  
Cigs Solar Cells ◽  
Effective Carrier ◽  
Opening Width

In this paper, we propose an optimized structure of thin Cu(In,Ga)Se2 (CIGS) solar cells with a grating aluminum oxide (Al2O3) passivation layer (GAPL) providing nano-sized contact openings in order to improve power conversion efficiency using optoelectrical simulations. Al2O3 is used as a rear surface passivation material to reduce carrier recombination and improve reflectivity at a rear surface for high efficiency in thin CIGS solar cells. To realize high efficiency for thin CIGS solar cells, the optimized structure was designed by manipulating two structural factors: the contact opening width (COW) and the pitch of the GAPL. Compared with an unpassivated thin CIGS solar cell, the efficiency was improved up to 20.38% when the pitch of the GAPL was 7.5–12.5 μm. Furthermore, the efficiency was improved as the COW of the GAPL was decreased. The maximum efficiency value occurred when the COW was 100 nm because of the effective carrier recombination inhibition and high reflectivity of the Al2O3 insulator passivation with local contacts. These results indicate that the designed structure has optimized structural points for high-efficiency thin CIGS solar cells. Therefore, the photovoltaic (PV) generator and sensor designers can achieve the higher performance of photosensitive thin CIGS solar cells by considering these results.

Efficient Defect Passivation with Niacin for High-Performance and Stable Perovskite Solar Cells

2021 ◽  
Author(s):  
Jing Ren ◽  
Shurong Wang ◽  
Jianxing Xia ◽  
Chengbo Li ◽  
Lisha Xie ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Trap States ◽  
Carrier Recombination ◽  
Defect Passivation ◽  
Recombination Centers ◽  
Charge Carrier Recombination ◽  
Halide Perovskite

Defects, inevitably produced in the solution-processed halide perovskite films, can act as charge carrier recombination centers to induce severe energy loss in perovskite solar cells (PSCs). Suppressing these trap states...

scholarly journals Lock-in Ultrafast Electron Microscopy Simultaneously Visualizes Carrier Recombination and Interface-Mediated Trapping

2020 ◽  
Vol 11 (20) ◽  
pp. 8880-8886
Author(s):  
Mathijs W. H. Garming ◽  
Maarten Bolhuis ◽  
Sonia Conesa-Boj ◽  
Pieter Kruit ◽  
Jacob P. Hoogenboom
Keyword(s):  
Electron Microscopy ◽  
Carrier Recombination ◽  
Lock In
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