Spin–orbit parameters derivation using single-frequency analysis of InGaAs multiple quantum wells in transient spin dynamics regime

2020 ◽  
Vol 127 (15) ◽  
pp. 153901
Author(s):  
Hiroki Shida ◽  
Kohei Kawaguchi ◽  
Yasuhito Saito ◽  
Ichirota Takazawa ◽  
Toshiki Fukasawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Frequency Analysis ◽  
Spin Dynamics ◽  
Multiple Quantum Wells ◽  
Single Frequency ◽  
Multiple Quantum ◽  
Spin Orbit

Room-temperature spin–orbit magnetic fields in slightly misoriented (110) InGaAs/InAlAs multiple quantum wells

2021 ◽  
Vol 119 (3) ◽  
pp. 032405
Author(s):  
Koichi Nakanishi ◽  
Ayuki Arikawa ◽  
Yasuhito Saito ◽  
Daisuke Iizasa ◽  
Satoshi Iba ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Spin Orbit

Transient diffusive spin dynamics in intrinsic InGaAs/InAlAs multiple quantum wells

2019 ◽  
Vol 115 (17) ◽  
pp. 172406 ◽  
Author(s):  
Kohei Kawaguchi ◽  
Toshiki Fukasawa ◽  
Ichirota Takazawa ◽  
Hiroki Shida ◽  
Yasuhito Saito ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Dynamics ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Spin dynamics of exciton states in GaAS/AlGaAs multiple quantum wells

1993 ◽  
Vol 13 (3) ◽  
pp. 353 ◽  
Author(s):  
B. Dareys ◽  
X. Marie ◽  
T. Amand ◽  
J. Barrau ◽  
Y. Shekun ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Dynamics ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1112
Author(s):  
Satoshi Iba ◽  
Ryogo Okamoto ◽  
Koki Obu ◽  
Yuma Obata ◽  
Yuzo Ohno
Keyword(s):  
Quantum Wells ◽  
Spin Dynamics ◽  
Relaxation Times ◽  
Flux Ratio ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Electron Spin Relaxation ◽  
Carrier Lifetimes ◽  
Wide Range

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τPL), and electron spin relaxation times (τs) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature Tg (430–600 °C) and a high V/III flux ratio using As2. At 530 °C < Tg < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τPL~40 ns at RT, one order of magnitude longer than those reported so far. Long τs (~6 ns) is also observed at RT.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum
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