2D hole gas mobility at diamond/insulator interface

2020 ◽  
Vol 116 (16) ◽  
pp. 162105 ◽  
Author(s):  
G. Daligou ◽  
J. Pernot
Keyword(s):  
Insulator Interface ◽  
Gas Mobility

Physics of Below Threshold Current Distribution in a-Si:H TFTs

1996 ◽  
Vol 424 ◽  
Author(s):  
H. C. Slade ◽  
M. S. Shur ◽  
S. C. Deane ◽  
M. Hack
Keyword(s):  
Amorphous Silicon ◽  
Threshold Current ◽  
Gate Insulator ◽  
Subthreshold Slope ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Spice Model ◽  
Active Layers ◽  
Insulator Interface ◽  
Current Activation

AbstractWe have examined the material properties and operation of bottom-gate amorphous silicon thin film transistors (TFTs) using temperature measurements of the subthreshold current. From the derivative of current activation energy with respect to gate bias, we have deduced information about the density of states for several different transistor types. We have demonstrated that, in TFTs with thin active layers and top nitride passivation, the current conduction channel moves from the gate insulator interface to the passivation insulator interface as the transistor switches off. Our 2D simulations clarify these experimental results. We have examined the effect of bias stress on the transistors and analyzed the resulting reduction in the subthreshold slope. Based on these results, we have extended our analytic amorphous silicon TFI SPICE model to include the effect of bias stress.

The effect of processing conditions on the GaAs/plasma‐grown insulator interface

1986 ◽  
Vol 59 (1) ◽  
pp. 1-4 ◽  
Author(s):  
F. I. Hshieh ◽  
J. M. Borrego ◽  
S. K. Ghandhi
Keyword(s):  
Processing Conditions ◽  
Insulator Interface

Studies of InP surface and InP-insulator interface by spectral photoluminescence

1988 ◽  
Vol 40-41 ◽  
pp. 753-754 ◽  
Author(s):  
P. Leyral ◽  
H. Bouredoucen ◽  
B. Commere ◽  
S. Krawczyk
Keyword(s):  
Insulator Interface ◽  
Inp Surface

Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver

2011 ◽  
Vol 679-680 ◽  
pp. 649-652 ◽  
Author(s):  
Jang Kwon Lim ◽  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Mietek Bakowski ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Surface Recombination ◽  
Current Gain ◽  
Surface Recombination Velocity ◽  
Switching Frequency ◽  
Switching Losses ◽  
Insulator Interface ◽  
Gate Driver ◽  
Recombination Velocity ◽  
Emitter Junction

The 1.2 kV SiC JFET and BJT devices have been investigated and compared with respect to total losses including the gate driver losses in a DC-DC converter configuration. The buried grid, Normally-on JFET devices with threshold voltage of -50 V and -10V are compared to BJT devices with ideal semiconductor and passivating insulator interface and an interface with surface recombination velocity of 4.5•104 cm/s yielding agreement to the reported experimental current gain values. The conduction losses of both types of devices are independent of the switching frequency while the switching losses are proportional to the switching frequency. The driver losses are proportional to the switching frequency in the JFET case but to a large extent independent of the switching frequency in the BJT case. The passivation of the emitter junction modeled here by surface recombination velocity has a significant impact on conduction losses and gate driver losses in the investigated BJT devices.

Research on the Type of Electrical Contact at Metal-Insulator Interface

2011 ◽  
Vol 383-390 ◽  
pp. 5154-5157
Author(s):  
Qian Peng ◽  
Li Ren Zhou
Keyword(s):  
Electrical Contact ◽  
Depletion Region ◽  
Energy Band Structure ◽  
Metal Insulator ◽  
Band Bending ◽  
Whole Process ◽  
Insulator Interface ◽  
Metal Insulator Metal ◽  
Electrode Metal ◽  
Nor Band

This paper takes metal-insulator-metal system as example and investigates the main types of electrical contact through the view of energy band structure, to analyze the whole process of the transition from ohm contact to barrier contact. Ohm contact, which promotes charges injection from electrode (metal) to insulator, can be used as storage of charge carrier, which is body limited; it can also be regarded as a type of contact that forms an accumulation layer extending from the interface to the interior of the insulator. Whereas, barrier contact is a type of contact which forms a depletion region extending from the interface to the interior of insulator. As for this type of contact, electron injection from metal tends to the state of saturation. The characteristic of neutral contact is that there is no space charge in the insulator, nor band bending, which means the boundary of conduction band and valence band up to the interface is flat.

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