Base pressure effect on electrical properties of chromium nanofilms

2021 ◽  
Vol 47 (12) ◽  
pp. 1030-1032
Author(s):  
L. Shiva ◽  
Chitralekha Alur ◽  
N. Ayachit ◽  
L. Udachan ◽  
S. Bhairamadagi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Pressure Effect ◽  
Base Pressure

Hydrostatic Pressure Effect on the Electrical Properties of Ni0.97Cu0.03S2 and Ni0.95Co0.05S2

1973 ◽  
Vol 35 (4) ◽  
pp. 1263-1263 ◽  
Author(s):  
Shûsuke Yomo ◽  
Nobuo Môri ◽  
Tadayasu Mitsui ◽  
Shinji Ogawa
Keyword(s):  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Pressure Effect

Pressure effect on the electrical properties of the ladder compounds (DT-TTF)2[M(mnt)2], M=Au, Pt, Ni

2003 ◽  
Vol 133-134 ◽  
pp. 405-406 ◽  
Author(s):  
E.B. Lopes ◽  
R.T. Henriques ◽  
M. Almeida ◽  
E. Ribera ◽  
M. Mas-Torrent ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Pressure Effect

scholarly journals Modulation of argon pressure as an option to control transmittance and resistivity of ZnO:Al films deposited by DC magnetron sputtering: on the dark yellow films at 10-7 Torr base pressures

2018 ◽  
Vol 64 (6) ◽  
pp. 566 ◽  
Author(s):  
Jorge Alberto García Valenzuela ◽  
Dagoberto Cabrera-German ◽  
Marcos Cota-Leal ◽  
Guillermo Suárez-Campos ◽  
Miguel Martínez-Gil ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Base Pressure ◽  
Argon Pressure ◽  
Oxygen Mixture ◽  
Optical And Electrical Properties ◽  
Deposition Pressure ◽  
Argon Gas

In a previous paper, we reported that thin films of ZnO:Al [aluminum-zinc oxide (AZO)] deposited after achieving a very low base pressure [from 4.0×10–7 Torr (5.6×10–5 Pa) to 5.7×10–7 Torr (7.6×10–5 Pa)] result dark yellow in color and are resistive. These are undesirable characteristics for the application of AZO thin films as front electrodes in solar cells. However, given the increasingly tendency in the acquisition of equipment that allow us to reach excellent vacuum levels, it is necessary to find the deposition conditions that lead to an improving of transmittance without greatly impacting the electrical properties of materials deposited after achieving these levels of vacuum. In this way, the present work is focused on AZO thin films deposited after achieving a very low base pressure value: 4.2×10–7 Torr (5.6×10–5 Pa). For this, we studied the effect of the variation of the oxygen volume percent in the argon/oxygen mixture (by maintaining the deposition pressure constant) and the effect of deposition pressure with only argon gas on the main properties of AZO thin films. The depositions were done at room temperature on glass substrates by direct-current magnetron sputtering with a power of 120 W (corresponding to a power density of 2.63 W/cm2). As results, we found that the variation of deposition pressure with only argon gas is a good option for the control of optical and electrical properties, since the addition of oxygen, although improves transmittance, greatly impacts on the electrical properties. Furthermore, an interesting correlation was found between the optical and electrical properties and the chemical composition of the AZO films, the latter depending on the argon pressure (for this, a careful X-ray photoelectron spectroscopy analysis was performed). Also, the inverse relationship between crystallinity and deposition rate was confirmed, in which deposition rate inversely depends on argon pressure.

High pressure effect on the electrical properties of NiS2

1973 ◽  
Vol 13 (8) ◽  
pp. 1083-1085 ◽  
Author(s):  
N. Mori ◽  
T. Mitsui ◽  
S. Yomo
Keyword(s):  
High Pressure ◽  
Electrical Properties ◽  
Pressure Effect ◽  
High Pressure Effect

High pressure effect on structural and electrical properties of glassy carbon

2003 ◽  
Vol 93 (4) ◽  
pp. 1991-1994 ◽  
Author(s):  
X. Wang ◽  
Z. X. Bao ◽  
Y. L. Zhang ◽  
F. Y. Li ◽  
R. C. Yu ◽  
...  
Keyword(s):  
High Pressure ◽  
Electrical Properties ◽  
Glassy Carbon ◽  
Pressure Effect ◽  
Structural And Electrical Properties ◽  
High Pressure Effect

Pressure Dependence on the Electrical Properties of SiO2 Gate Oxide Formed by Inductive Coupled Plasma Oxidation

2011 ◽  
Vol 1287 ◽  
Author(s):  
Beom-jong Kim ◽  
Dong-chan Kim ◽  
Yoon-jae Kim. ◽  
Han-jin Lim ◽  
Ju-eun Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Pressure Dependence ◽  
Pressure Effect ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Current Gain ◽  
Electrical Characteristics ◽  
Field Mobility ◽  
Thin Oxide Films ◽  
Nmos Transistors

ABSTRACTWe investigated the pressure dependence of the inductive coupled plasma (ICP) oxidation on the electrical characteristics of the thin oxide films. Activation energies and electron temperatures with different pressures were estimated. To demonstrate the pressure effect on the plasma oxide quality, simple N type metal-oxide-semiconductor (NMOS) transistors were fabricated and investigated in a few electrical properties. At higher pressure than 200mTorr, plasma oxide has a slightly higher on-current and a lower interfacial trap density. The on-current gain seems to be related to the field mobility increase and the lower defective interface to the electron temperature during oxidation.

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