Searching for stable 2D gallium and indium oxides

Scilight ◽  
2020 ◽  
Vol 2020 (29) ◽  
pp. 291113
Author(s):  
Chris Patrick
Keyword(s):  
Indium Oxides

Printable Single-Unit-Cell-Thick Transparent Zinc-Doped Indium Oxides with Efficient Electron Transport Properties

ACS Nano ◽  
2021 ◽  
Author(s):  
Azmira Jannat ◽  
Nitu Syed ◽  
Kai Xu ◽  
Md. Ataur Rahman ◽  
Md. Mehdi Masud Talukder ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Single Unit ◽  
Unit Cell ◽  
Electron Transport Properties ◽  
Indium Oxides

scholarly journals Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping

2020 ◽  
Vol 128 (3) ◽  
pp. 034304
Author(s):  
Ruishen Meng ◽  
Michel Houssa ◽  
Konstantina Iordanidou ◽  
Geoffrey Pourtois ◽  
Valeri Afanasiev ◽  
...  
Keyword(s):  
Global Structure ◽  
Hole Doping ◽  
Two Dimensional ◽  
Half Metallicity ◽  
Indium Oxides ◽  
Via Hole

scholarly journals Oxygen Sensors Based on Screen Printed Platinum and Palladium Doped Indium Oxides

Proceedings ◽  
2017 ◽  
Vol 1 (4) ◽  
pp. 401 ◽  
Author(s):  
Wangi Sari ◽  
Peter Smith ◽  
Simon Leigh ◽  
James Covington
Keyword(s):  
Oxygen Sensors ◽  
Indium Oxides ◽  
Screen Printed

Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering

2015 ◽  
Vol 1110 ◽  
pp. 211-217
Author(s):  
Jin Woo Lee ◽  
Yun Hae Kim ◽  
Chang Wook Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stacking Sequence ◽  
Flat Panel Displays ◽  
Oxide Systems ◽  
Thin Film Layer ◽  
Tin Oxides ◽  
Impurity Doped ◽  
Indium Oxides ◽  
Film Layer

Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.

Oxidation of PB-SN and PB-SN-in Alloys: Bulk VS. Grain boundary regions

1989 ◽  
Vol 167 ◽  
Author(s):  
D. A. Sluzewski ◽  
Y. A. Chang ◽  
V. C. Marcotte
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Tin Oxide ◽  
Single Phase ◽  
Surface Oxide ◽  
Scanning Auger Microscopy ◽  
Bulk Surface ◽  
Indium Oxides ◽  
Auger Microscopy ◽  
Argon Ion

AbstractAir oxidized Pb-Sn and Pb-Sn-In single phase alloys have been studied with scanning Auger microscopy. Line scans across grain boundaries combined with argon ion sputter etching revealed grain boundary oxidation. In the Pb-Sn samples, tin is preferentially oxidized with the grain boundary regions having a much higher percentage of tin oxide than the bulk surface oxide. In the Pb-Sn-In alloys, both tin and indium are preferentially oxidized with the grain boundary regions being enriched with tin and indium oxides.

Enthalpy of formation and lattice energy of bismuth perrhenate doped by neodymium and indium oxides

2017 ◽  
Vol 658 ◽  
pp. 63-67 ◽  
Author(s):  
N.I. Matskevich ◽  
Th. Wolf ◽  
P. Adelmann ◽  
A.N. Semerikova ◽  
N.V. Gelfond ◽  
...  
Keyword(s):  
Enthalpy Of Formation ◽  
Lattice Energy ◽  
Indium Oxides
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