New etched-mirror fabrication process for aluminum gallium nitride laser diodes

Scilight ◽  
2020 ◽  
Vol 2020 (13) ◽  
pp. 131105
Author(s):  
Jodi Ackerman Frank
Keyword(s):  
Gallium Nitride ◽  
Aluminum Gallium Nitride ◽  
Laser Diodes ◽  
Fabrication Process ◽  
Nitride Laser

Gallium nitride laser diodes with integrated absorber: on the dynamics of self-pulsation

2014 ◽  
Vol 11 (3-4) ◽  
pp. 670-673 ◽  
Author(s):  
Katarzyna Holc ◽  
Gerrit Lükens ◽  
Thomas Weig ◽  
Klaus Köhler ◽  
Joachim Wagner ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Laser Diodes ◽  
Nitride Laser

Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti:sapphire laser

2017 ◽  
Vol 56 (6) ◽  
pp. 1654 ◽  
Author(s):  
Ryota Sawada ◽  
Hiroki Tanaka ◽  
Naoto Sugiyama ◽  
Fumihiko Kannari
Keyword(s):  
Gallium Nitride ◽  
Indium Gallium Nitride ◽  
Laser Diodes ◽  
Ti:Sapphire Laser ◽  
Indium Gallium ◽  
Nitride Laser

How to secure the fabrication of Gallium Nitride on Si wafers

2019 ◽  
Vol 2019 (1) ◽  
pp. 000444-000449
Author(s):  
D. Alliata ◽  
N. Anderson ◽  
M. Durand de Gevigney ◽  
I. Bergoend ◽  
P. Gastaldo
Keyword(s):  
Gallium Nitride ◽  
Phase Shift ◽  
Process Control ◽  
Silicon Substrate ◽  
High Volume ◽  
Fabrication Process ◽  
Control Solution ◽  
Total Control ◽  
Before And After ◽  
Infrared Interferometry

Abstract Process control solutions to secure the High-Volume Manufacturing of Gallium Nitride (GaN) devices for power applications are a must today. Unity recently developed and introduced on the market a total control solution that address both defectivity and metrology needs of GaN industry. Proprietary technologies like Phase Shift Deflectometry, darkfield inspection, confocal chromatic imaging and infrared interferometry are here explored to detect killer defects potentially affecting the gallium nitride wafer. More in detail, we characterized Gallium nitride on Silicon substrate before and after the fabrication of the final device and demonstrated how the fabrication process can be optimized.

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

2012 ◽  
Vol 5 (11) ◽  
pp. 112103 ◽  
Author(s):  
Czeslaw Skierbiszewski ◽  
Marcin Siekacz ◽  
Henryk Turski ◽  
Grzegorz Muziol ◽  
Marta Sawicka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
True Blue ◽  
Nitride Laser

Nitride Laser Diodes With Nonepitaxial Cladding Layers

2010 ◽  
Vol 22 (5) ◽  
pp. 329-331 ◽  
Author(s):  
B. Cheng ◽  
C.L. Chua ◽  
Zhihong Yang ◽  
M. Teepe ◽  
C. Knollenberg ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Nitride Laser ◽  
Cladding Layers
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