Low‐loss GaAs/AlGaAs waveguide phase modulator using a W‐shaped index profile

1988 ◽  
Vol 53 (19) ◽  
pp. 1803-1805 ◽  
Author(s):  
R. J. Deri ◽  
E. Kapon ◽  
J. P. Harbison ◽  
M. Seto ◽  
C. P. Yun ◽  
...  
Keyword(s):  
Phase Modulator ◽  
Index Profile ◽  
Low Loss

Low-loss, single-model optical phase modulator in SIMOX material

1994 ◽  
Vol 12 (8) ◽  
pp. 1394-1400 ◽  
Author(s):  
C.K. Tang ◽  
G.T. Reed ◽  
A.J. Walton ◽  
A.G. Rickman
Keyword(s):  
Phase Modulator ◽  
Low Loss ◽  
Single Model ◽  
Optical Phase

LOW LOSS DISPERSION SHIFTED FIBER WITH FLUORINE DOPED CLADDING AND STEP LIKE INDEX PROFILE

1986 ◽  
Author(s):  
Mikio Ogai ◽  
Shinichi Yano ◽  
Akira Iino ◽  
Masakazu Higashimoto ◽  
Kunio Kokura ◽  
...  
Keyword(s):  
Index Profile ◽  
Low Loss

scholarly journals Fast and low loss flexoelectro-optic liquid crystal phase modulator with a chiral nematic reflector

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Xiuze Wang ◽  
Julian A. J. Fells ◽  
Wing C. Yip ◽  
Taimoor Ali ◽  
Jia-de Lin ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Crystal Phase ◽  
Phase Modulator ◽  
Liquid Crystal Phase ◽  
Low Loss ◽  
Chiral Nematic ◽  
Liquid Crystal Phase Modulator

scholarly journals Silicon Optical Modulator Using a Low-Loss Phase Shifter Based on a Multimode Interference Waveguide

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 482 ◽  
Author(s):  
Daisuke Inoue ◽  
Tadashi Ichikawa ◽  
Akari Kawasaki ◽  
Tatsuya Yamashita
Keyword(s):  
Phase Shifter ◽  
Optical Modulation ◽  
Optical Modulator ◽  
Multimode Interference ◽  
Phase Modulator ◽  
Proof Of Concept ◽  
Low Loss ◽  
Scattering Loss ◽  
Propagation Losses ◽  
Scattering Losses

We have developed a novel phase modulator, based on fin-type electrodes placed at self-imaging positions of a silicon multimode interference (MMI) waveguide, which allows reduced scattering losses and relaxes the fabrication tolerance. The measured propagation losses and spectral bandwidth are 0.7 dB and 33 nm, respectively, on a 987 μm-long phase shifter. Owing to the self-imaging effect in the MMI waveguide, the wave-front expansion to the electrode was counteracted, and therefore, the scattering loss caused by electrode fins was successfully mitigated. As a proof-of-concept for the MMI-based phase modulator applications, we performed optical modulation based on Mach–Zehnder interferometers (MZIs). The π shift current of the modulator was 1.5 mA.

Low‐loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy

1990 ◽  
Vol 56 (9) ◽  
pp. 802-804 ◽  
Author(s):  
Y. S. Kim ◽  
S. S. Lee ◽  
R. V. Ramaswamy ◽  
S. Sakai ◽  
Y. C. Kao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Molecular Beam ◽  
Phase Modulator ◽  
Low Loss

High-efficiency, Low-loss Optical Phase Modulator based on III-V/Si Hybrid MOS Capacitor

2018 ◽  
Author(s):  
Mitsuru Takenaka ◽  
Jae-Hoon Han ◽  
Jin-Kwon Park ◽  
Frederic Boeuf ◽  
Junichi Fujikata ◽  
...  
Keyword(s):  
High Efficiency ◽  
Phase Modulator ◽  
Low Loss ◽  
Mos Capacitor ◽  
Optical Phase

scholarly journals Phase Modulator Defined by Impurities Induced Disordering

1996 ◽  
Vol 450 ◽  
Author(s):  
K. M. Lo ◽  
W. C. H. Choy ◽  
E. H. Li
Keyword(s):  
Refractive Index ◽  
Quantum Wells ◽  
Single Mode ◽  
Refractive Index Profile ◽  
Phase Modulator ◽  
Multiple Quantum ◽  
Index Profile ◽  
Phase Modulators ◽  
Operating Region ◽  
Waveguide Type

ABSTRACTOptical waveguide type phase modulators defined by impurities induced disordering (IID) are investigated. To achieve a better optical confinement, a two steps ion implantation process is carried out to introduce additional impurities with respect to depth in the cladding region. A more uniform refractive index profile in deeper lateral confined region is obtained after thermal annealing. The refractive index different between the core and cladding can be adjusted by controlling the extension of interdiffusion in the cladding. This provide tuning of single mode operating region. For present IID phase modulator with 25 period of 100Å/100Å Al0.3Ga0.7As/GaAs multiple quantum wells single mode operating at 0.88//m, a normalized phase shift of 362°/Vmm. chirping parameter of 47, and absorption loss less than 120cm−1 are achieved theoretically.

Low-loss graphene-based optical phase modulator operating at mid-infrared wavelength

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FH06
Author(s):  
Yuki Yamaguchi ◽  
Shinichi Takagi ◽  
Mitsuru Takenaka
Keyword(s):  
Phase Modulator ◽  
Low Loss ◽  
Mid Infrared ◽  
Infrared Wavelength ◽  
Optical Phase
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