Substrate and capping layer effects on the phonon spectrum of ultrathin superlattices

1988 ◽  
Vol 52 (24) ◽  
pp. 2040-2042 ◽  
Author(s):  
D. J. Lockwood ◽  
M. W. C. Dharma‐wardana ◽  
G. C. Aers ◽  
J.‐M. Baribeau
Keyword(s):  
Phonon Spectrum ◽  
Capping Layer

LOW-FREQUENCY PHONON SPECTRUM PECULIARITIES OF Sn-Pb ALLOYS

1978 ◽  
Vol 39 (C6) ◽  
pp. C6-1037-C6-1038
Author(s):  
V.M. Pan ◽  
B.G. Nikitin ◽  
A.M. Korostil ◽  
V.V. Nemoshkalenko ◽  
V.P. Dovgopol ◽  
...  
Keyword(s):  
Phonon Spectrum ◽  
Low Frequency

Electrical Failure and Damage Analysis of Multi-Layer Metal Films on Flexible Substrate during Cyclic Bending Deformation

2011 ◽  
Author(s):  
Byoung-Joon Kim ◽  
Hae-A-Seul Shin ◽  
In-Suk Choi ◽  
Young-Chang Joo
Keyword(s):  
Fatigue Resistance ◽  
Electrical Resistance ◽  
Metal Film ◽  
Flexible Substrate ◽  
Resistance Change ◽  
Cyclic Bending ◽  
Capping Layer ◽  
Bending Strain ◽  
Cu Film ◽  
Electrical Resistance Change

Abstract The electrical resistance Cu film on flexible substrate was investigated in cyclic bending deformation. The electrical resistance of 1 µm thick Cu film on flexible substrate increased up to 120 % after 500,000 cycles in 1.1 % tensile bending strain. Crack and extrusion were observed due to the fatigue damage of metal film. Low bending strain did not cause any damage on metal film but higher bending strain resulted in severe electrical and mechanical damage. Thinner film showed higher fatigue resistance because of the better mechanical property of thin film. Cu film with NiCr under-layer showed poorer fatigue resistance in tensile bending mode. Ni capping layer did not improve the fatigue resistance of Cu film, but Al capping layer suppressed crack formation and lowered electrical resistance change. The NiCr under layer, Ni capping layer, and Al capping layer effect on electrical resistance change of Cu film was compared with Cu only sample.

Phonon Spectrum of Crystals InxTl1 – xI Substitutional Solid Solutions

2016 ◽  
Vol 8 (1) ◽  
pp. 01010-1-01010-5 ◽  
Author(s):  
A. I. Kashuba ◽  
◽  
S. V. Apunevych ◽  
Keyword(s):  
Solid Solutions ◽  
Phonon Spectrum ◽  
Substitutional Solid Solutions

Phonon spectrum and specific heat of silicon nanowires

2007 ◽  
Vol 102 (10) ◽  
pp. 104303 ◽  
Author(s):  
Y. Zhang ◽  
J. X. Cao ◽  
Y. Xiao ◽  
X. H. Yan
Keyword(s):  
Specific Heat ◽  
Silicon Nanowires ◽  
Phonon Spectrum

scholarly journals Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Byeong Hyeon Lee ◽  
Ahrum Sohn ◽  
Sangsig Kim ◽  
Sang Yeol Lee
Keyword(s):  
Amorphous Oxide ◽  
Capping Layer

NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

2016 ◽  
Vol 6 (2) ◽  
pp. Q3067-Q3070 ◽  
Author(s):  
J. D. Greenlee ◽  
A. Nath ◽  
T. J. Anderson ◽  
B. N. Feigelson ◽  
A. D. Koehler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Devices ◽  
Capping Layer ◽  
Group Iii ◽  
Nitride Semiconductor ◽  
Group Iii Nitride

Capping layer induced degradations in nano MOSFETs with scaled IL

2011 ◽  
Author(s):  
Tung-Hsing Lee ◽  
S-M Chen ◽  
Chia-Wei Hsu ◽  
Yean-Kuen Fang ◽  
Feng-Renn Juang ◽  
...  
Keyword(s):  
Capping Layer

Controlled removal of amorphous Se capping layer from a topological insulator

2014 ◽  
Vol 105 (24) ◽  
pp. 241605 ◽  
Author(s):  
Kumar Virwani ◽  
Sara E. Harrison ◽  
Aakash Pushp ◽  
Teya Topuria ◽  
Eugene Delenia ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Capping Layer
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