Electroabsorption of highly confined systems: Theory of the quantum‐confined Franz–Keldysh effect in semiconductor quantum wires and dots

1988 ◽  
Vol 52 (25) ◽  
pp. 2154-2156 ◽  
Author(s):  
D. A. B. Miller ◽  
D. S. Chemla ◽  
S. Schmitt‐Rink
Keyword(s):  
Systems Theory ◽  
Quantum Wires ◽  
Confined Systems ◽  
Quantum Confined ◽  
Franz Keldysh Effect

Quantum-confined Franz-Keldysh effect in CdTe quantum dots in glass

Optics News ◽  
1989 ◽  
Vol 15 (12) ◽  
pp. 26 ◽  
Author(s):  
V. Esch ◽  
G. Khitrova ◽  
H. M. Gibbs ◽  
Xu Jiajin ◽  
L. C. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Cdte Quantum Dots ◽  
Quantum Confined ◽  
Franz Keldysh Effect

Multiparameter deformation theory for quantum confined systems

2009 ◽  
Vol 50 (11) ◽  
pp. 112103 ◽  
Author(s):  
A. N. F. Aleixo ◽  
A. B. Balantekin
Keyword(s):  
Deformation Theory ◽  
Confined Systems ◽  
Quantum Confined

Coherent Dynamics of Continuum and Excitonic States in Quantum Confined Systems

1998 ◽  
Vol 206 (1) ◽  
pp. 443-453 ◽  
Author(s):  
H.J. Bakker ◽  
T. Dekorsy ◽  
G.C. Cho ◽  
H. Kurz ◽  
P. Leisching ◽  
...  
Keyword(s):  
Confined Systems ◽  
Coherent Dynamics ◽  
Quantum Confined ◽  
Excitonic States

Quantum-confined Franz-Keldysh effect in quantum-well laser diodes

1996 ◽  
Vol 159 (1-4) ◽  
pp. 463-466 ◽  
Author(s):  
A.A. Toropov ◽  
T.V. Shubina ◽  
S.V. Ivanov ◽  
A.V. Lebedev ◽  
S.V. Sorokin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Quantum Confined ◽  
Franz Keldysh Effect

scholarly journals Comparative Study of Si-Ge-Sn Resonant Cavity Enhanced Heterojunction Bipolar Phototransistor (RCE-HPT) under Quantum Confined Stark Effect (QCSE) and Franz Keldysh Effect (FKE) at 1.55 µm

2021 ◽  
Author(s):  
Soumava Ghosh
Keyword(s):  
Stark Effect ◽  
Resonant Cavity ◽  
Optical Gain ◽  
Group Iv ◽  
Barrier Structure ◽  
Collector Current ◽  
Absorption Region ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Franz Keldysh Effect

Abstract Group-IV and their alloy based Heterojunction Bipolar Phototransistors (HPTs) are of immense interest in recent day optical communication. In this paper first resonant cavity enhanced heterojunction bipolar phototransistor (RCE-HPT) with Ge0.992Sn0.008/Si0.30Ge0.61Sn0.09 Quantum Well/barrier structure under Quantum Confined Stark Effect (QCSE) has been evaluated. Further the bulk GeSn absorption region has been considered instead of QW/barrier structure and estimated the Franz Keldysh Effect (FKE). Finally different RCE-HPT related parameters such as quantum efficiency-bandwidth product, responsivity, collector current and optical gain have been studied and compared under QCSE and FKE.

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