scholarly journals Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties

1988 ◽  
Vol 52 (9) ◽  
pp. 728-730 ◽  
Author(s):  
G. I. Ng ◽  
D. Pavlidis ◽  
M. Quillec ◽  
Y. J. Chan ◽  
M. D. Jaffe ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Properties ◽  
Active Channel

Properties of Ohmic Contacts to Heterojunction Transistors

1990 ◽  
Vol 181 ◽  
Author(s):  
H. Barry Harrison
Keyword(s):  
Physical Properties ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Active Channel ◽  
Heterojunction Transistors

ABSTRACTThe electrical and physical properties of the contact between the active channel of high electron mobility transistors (HEMT’s) and the source or drain contacts play an important role in determining the transistor characteristics. This paper considers electrical models that may be applied to the various techniques now available to form these Interconnections. Results of electrical (and some physical) studies with regard to these systems are then discussed and compared where possible with predictions made using the electrical models. The comparisons show that the electrical models provide a useful base to identify the important parameters in these interconnections.

The Relationship between InGaAs Channel Layer Thickness and Device Performance in High Electron Mobility Transistors

1994 ◽  
Vol 340 ◽  
Author(s):  
M. Meshkinpour ◽  
M. S. Goorsky ◽  
D. C. Streit ◽  
T. Block ◽  
M. Wojtowicz ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Effective Means ◽  
High Electron Mobility Transistors ◽  
Misfit Dislocations ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray ◽  
Electron Mobility Transistors ◽  
Channel Thickness ◽  
Device Properties

ABSTRACTThe performance of InGaAs/GaAs pseudomorphic high electron mobility transistors is anticipated to improve with increased channel thickness due to reduced effects of quantum confinement. However, greater channel thicknesses increase the probability of forming misfit dislocations which have been reported to impair device properties. We characterized the composition and thickness of the active layer in Al0.25Ga0.75As / In0.21Ga0.79As structures with different channel thicknesses (75 Å - 300 Å) to within ± 0.005 and ± 8 Å using high resolution x-ray techniques. We determined, using Hall and rf measurements, that the device properties of these structures improved with increasing thickness up to about 185-205 Å; degraded properties were observed for thicker channel layers. Cathodoluminescence results indicate that the mosaic spread observed in x-ray triple axis rocking curves of these device structures is due to the presence of misfit dislocations. Thus, even though misfit dislocations are present, the device structure performs best with a channel thickness of ∼185 Å. These results demonstrate that one can fabricate functional devices in excess of critical thickness considerations, and that these x-ray techniques provide an effective means to evaluate structural properties prior to device processing.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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