Materials and device properties of pseudomorphic In x Ga1?x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0

1991 ◽  
Vol 53 (2) ◽  
pp. 109-113 ◽  
Author(s):  
T. Schweizer ◽  
K. K�hler ◽  
P. Ganser ◽  
A. H�lsmann ◽  
P. Tasker
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Device Properties

The Relationship between InGaAs Channel Layer Thickness and Device Performance in High Electron Mobility Transistors

1994 ◽  
Vol 340 ◽  
Author(s):  
M. Meshkinpour ◽  
M. S. Goorsky ◽  
D. C. Streit ◽  
T. Block ◽  
M. Wojtowicz ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Effective Means ◽  
High Electron Mobility Transistors ◽  
Misfit Dislocations ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray ◽  
Electron Mobility Transistors ◽  
Channel Thickness ◽  
Device Properties

ABSTRACTThe performance of InGaAs/GaAs pseudomorphic high electron mobility transistors is anticipated to improve with increased channel thickness due to reduced effects of quantum confinement. However, greater channel thicknesses increase the probability of forming misfit dislocations which have been reported to impair device properties. We characterized the composition and thickness of the active layer in Al0.25Ga0.75As / In0.21Ga0.79As structures with different channel thicknesses (75 Å - 300 Å) to within ± 0.005 and ± 8 Å using high resolution x-ray techniques. We determined, using Hall and rf measurements, that the device properties of these structures improved with increasing thickness up to about 185-205 Å; degraded properties were observed for thicker channel layers. Cathodoluminescence results indicate that the mosaic spread observed in x-ray triple axis rocking curves of these device structures is due to the presence of misfit dislocations. Thus, even though misfit dislocations are present, the device structure performs best with a channel thickness of ∼185 Å. These results demonstrate that one can fabricate functional devices in excess of critical thickness considerations, and that these x-ray techniques provide an effective means to evaluate structural properties prior to device processing.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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