Effects of deposition temperature of insulator films on the electrical characteristics of InP metal‐insulator‐semiconductor field‐effect transistors

1988 ◽  
Vol 52 (17) ◽  
pp. 1437-1438 ◽  
Author(s):  
Y. Iwase ◽  
F. Arai ◽  
T. Sugano
Keyword(s):  
Deposition Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Electrical characteristics and photolytic tuning of poly(3-hexylthiophene) thin film metal–insulator–semiconductor field-effect transistors (MISFETs)

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1171-1177 ◽  
Author(s):  
Z. Xie ◽  
M. S. A. Abdou ◽  
X. Lu ◽  
M. J. Deen ◽  
S. Holdcroft
Keyword(s):  
Thin Film ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Current Component ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Photolytic Degradation ◽  
In Series

In this paper, we present results on the electrical characteristics of both thick and thin film polymer metal–insulator–semiconductor field-effect transistors (MISFETs) based on poly(3-hexylthiophene) semiconducting substrate. These MISFETs were fabricated in eight steps using conventional semiconductor processing technology. The MISFETs had excellent current–voltage characteristics and showed little degradation with time. Electrical parameters of threshold voltage, mobility, and transconductance were − 1 V, 10−4–10−5 cm2 V−1 s−1, and 10−9 S, respectively. These values are typical of π-conjugated polymer-based MISFETs. Electrical transport in MISFETs were by both bulk (or resistive) and FET-like mechanisms in the thick film transistors. The resistive current component and the electrical characteristics were found to be tunable by photolytic degradation of the semiconducting polymer. In this process, the semiconducting π-conjugated regions were spatially converted to insulating regions by novel photo-oxidative chemistry. We were also successful in modelling the MISFETs as an intrinsic FET with parasitic source and drain resistances in series with it and a varistor (for the bulk current component) in parallel with the intrinsic FET. Using this circuit model, we obtained very good agreements between SPICE simulations and the experimental results.

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

2010 ◽  
Vol 97 (25) ◽  
pp. 253502 ◽  
Author(s):  
Yuji Urabe ◽  
Masafumi Yokoyama ◽  
Hideki Takagi ◽  
Tetsuji Yasuda ◽  
Noriyuki Miyata ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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