Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs

1987 ◽  
Vol 51 (25) ◽  
pp. 2118-2120 ◽  
Author(s):  
Sandip Tiwari ◽  
Jeffrey Hintzman ◽  
Alessandro Callegari
1987 ◽  
Vol 92 ◽  
Author(s):  
T.S. Kalkur ◽  
Y.C. Lu ◽  
C.A. Paz de Araujo

ABSTRACTRapid thermal diffusion of zinc into semi-insulating GaAs from spin-on zinc silica film is investigated. The rapid thermal diffusion is performed for various diffusion times (5 to 25 sec) and temperatures (800° to 950° C) with tungstenhalogen lamps as the heat source. The sheet resistivity, surface hole concentration and mobility of these zinc diffused layers as measured by Van der Pauw technique shows the formation of shallow p+ layer. The surface morphology of these diffused layers are observed in a low voltage Scanning Electron Microscope (SEM) and the depth profile of diffused impurities are determined by Secondary Ion Mass Spectroscopy (SIMS). Nonalloyed ohmic contacts are formed on these zinc diffused layers and the contact resistivity is determined by the Transmission Line Method (TLM).


2004 ◽  
Vol 40 (1) ◽  
pp. 83 ◽  
Author(s):  
L.-E. Wernersson ◽  
S. Kabeer ◽  
V. Zela ◽  
E. Lind ◽  
J. Zhang ◽  
...  

2000 ◽  
Vol 21 (6) ◽  
pp. 274-276 ◽  
Author(s):  
S. Sivoththaman ◽  
W. Laureys ◽  
P. De Schepper ◽  
J. Nijs ◽  
R. Mertens

1998 ◽  
Vol 27 (12) ◽  
pp. 1315-1322 ◽  
Author(s):  
S. Noël ◽  
L. Ventura ◽  
A. Slaoui ◽  
J. C. Muller ◽  
B. Groh ◽  
...  

1996 ◽  
Vol 35 (Part 2, No. 12A) ◽  
pp. L1554-L1557 ◽  
Author(s):  
Seung-Man Park ◽  
Jae Mook Kim ◽  
Hee Chul Lee ◽  
Choong-Ki Kim

1984 ◽  
Vol 131 (10) ◽  
pp. 2387-2394 ◽  
Author(s):  
R. B. Fair ◽  
J. J. Wortman ◽  
J. Liu

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