Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities

H. Z. Chen; A. Ghaffari; H. Morkoç; A. Yariv

doi:10.1063/1.98958

Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities

Applied Physics Letters ◽

10.1063/1.98958 ◽

1987 ◽

Vol 51 (25) ◽

pp. 2094-2096 ◽

Cited By ~ 51

Author(s):

H. Z. Chen ◽

A. Ghaffari ◽

H. Morkoç ◽

A. Yariv

Keyword(s):

Molecular Beam ◽

Threshold Current ◽

Molecular Beam Epitaxial ◽

Low Threshold ◽

Current Densities

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Very low threshold current densities (under 100 A/cm2) in AlGaAs/GaAs single-quantum-well GRINSCH lasers grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19870922 ◽

1987 ◽

Vol 23 (25) ◽

pp. 1334 ◽

Cited By ~ 16

Author(s):

H.Z. Chen ◽

A. Ghaffari ◽

H. Morkoc ◽

A. Yariv

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Threshold Current ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold ◽

Current Densities

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Gas-source molecular beam epitaxial growth of low threshold current 1.3 μm lasers

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00829-9 ◽

1997 ◽

Vol 175-176 ◽

pp. 945-947 ◽

Cited By ~ 5

Author(s):

P. Thiagarajan ◽

G.E. Giudice ◽

H. Temkin ◽

G.Y. Robinson

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Threshold Current ◽

Molecular Beam Epitaxial ◽

Gas Source ◽

Low Threshold ◽

Molecular Beam Epitaxial Growth

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Low threshold current density 1.3 [micro sign]m InAs∕InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy

Electronics Letters ◽

10.1049/el:20040127 ◽

2004 ◽

Vol 40 (3) ◽

pp. 179 ◽

Cited By ~ 7

Author(s):

F.Y. Chang ◽

J.D. Lee ◽

H.H. Lin

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Dot Lasers ◽

Gas Source ◽

Low Threshold ◽

Cladding Layers

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Low threshold current GaAs/InGaAs vertical-cavity surface-emitting laser grown at a constant temperature by molecular beam epitaxy

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616475 ◽

2002 ◽

Author(s):

C.Y. Li ◽

D.H. Zhang ◽

S.F. Yoon

Keyword(s):

Molecular Beam Epitaxy ◽

Constant Temperature ◽

Molecular Beam ◽

Threshold Current ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth

Applied Physics Letters ◽

10.1063/1.121112 ◽

1998 ◽

Vol 72 (13) ◽

pp. 1553-1555 ◽

Cited By ~ 5

Author(s):

Masayuki Itoh ◽

Hideo Sugiura ◽

Hiroshi Yasaka ◽

Yasuhiro Kondo ◽

Kenji Kishi ◽

...

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Threshold Current ◽

Molecular Beam Epitaxial ◽

Differential Gain ◽

Buried Heterostructure ◽

Molecular Beam Epitaxial Growth ◽

Multi Quantum Well

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Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities

Optics Express ◽

10.1364/oe.20.022181 ◽

2012 ◽

Vol 20 (20) ◽

pp. 22181 ◽

Cited By ~ 119

Author(s):

Andrew Lee ◽

Qi Jiang ◽

Mingchu Tang ◽

Alwyn Seeds ◽

Huiyun Liu

Keyword(s):

Quantum Dot ◽

Continuous Wave ◽

Laser Diodes ◽

Threshold Current ◽

Si Substrate ◽

Quantum Dot Laser ◽

Low Threshold ◽

Current Densities ◽

Gaas Quantum Dot

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Low threshold current AlGaAs/GaAs distributed feedback laser grown by two‐step molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.96074 ◽

1985 ◽

Vol 47 (6) ◽

pp. 570-572 ◽

Cited By ~ 9

Author(s):

Keisuke Kojima ◽

Susumu Noda ◽

Kazumasa Mitsunaga ◽

Kazuo Kyuma ◽

Takashi Nakayama

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Threshold Current ◽

Distributed Feedback ◽

Distributed Feedback Laser ◽

Low Threshold

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Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105098 ◽

1991 ◽

Vol 58 (17) ◽

pp. 1816-1818 ◽

Cited By ~ 75

Author(s):

R. L. Williams ◽

M. Dion ◽

F. Chatenoud ◽

K. Dzurko

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Threshold Current ◽

Low Threshold

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1.5 μm wavelength compressively strained GaInAs/AlGaInAs multiquantum‐well lasers grown by molecular‐beam epitaxy with high differential gain and low threshold current density

Applied Physics Letters ◽

10.1063/1.114532 ◽

1995 ◽

Vol 67 (4) ◽

pp. 449-451 ◽

Cited By ~ 1

Author(s):

H. Shimizu ◽

T. Fukushima ◽

K. Nishikata ◽

Y. Hirayama ◽

M. Irikawa

Keyword(s):

Molecular Beam Epitaxy ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Differential Gain ◽

Low Threshold ◽

Multiquantum Well

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