Selective epitaxial growth of gallium arsenide by molecular beam epitaxy

A. Okamoto; K. Ohata

doi:10.1063/1.98619

Selective epitaxial growth of gallium arsenide by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.98619 ◽

1987 ◽

Vol 51 (19) ◽

pp. 1512-1514 ◽

Cited By ~ 53

Author(s):

A. Okamoto ◽

K. Ohata

Keyword(s):

Gallium Arsenide ◽

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth

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Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/3/009 ◽

1999 ◽

Vol 14 (3) ◽

pp. 257-265 ◽

Cited By ~ 26

Author(s):

Eun Soo Kim ◽

Noritaka Usami ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Gas Source

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Limiting conditions of Si selective epitaxial growth in Si2H6gas‐source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.106234 ◽

1991 ◽

Vol 59 (14) ◽

pp. 1735-1736 ◽

Cited By ~ 22

Author(s):

K. Aketagawa ◽

T. Tatsumi ◽

J. Sakai

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth

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Selective Epitaxial Growth of InAs on GaAs by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.26.l1174 ◽

1987 ◽

Vol 26 (Part 2, No. 7) ◽

pp. L1174-L1176 ◽

Cited By ~ 14

Author(s):

Akihiko Okamoto ◽

Keiichi Ohata

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth

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Low-Temperature Selective Epitaxial Growth of GaAs Using Triethylgallium and Amino-As in Metalorganic Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.3500 ◽

1994 ◽

Vol 33 (Part 1, No. 6A) ◽

pp. 3500-3504 ◽

Cited By ~ 3

Author(s):

Tadachika Hidaka ◽

Ikuo Suemune

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth ◽

Metalorganic Molecular Beam Epitaxy

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Influence of misfit strain on {311} facet development in selective epitaxial growth of Si1−xGex/Si(100) grown by gas-source molecular beam epitaxy

Thin Solid Films ◽

10.1016/s0040-6090(99)01114-1 ◽

2000 ◽

Vol 365 (1) ◽

pp. 147-150 ◽

Cited By ~ 2

Author(s):

Greg D. U'Ren ◽

Mark S Goorsky ◽

Kang L Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Misfit Strain ◽

Selective Epitaxial Growth ◽

Gas Source

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Selective epitaxial growth by molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/8/6/007 ◽

1993 ◽

Vol 8 (6) ◽

pp. 1011-1015 ◽

Cited By ~ 16

Author(s):

A Okamoto

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth

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Bipolar transistor fabrication using selective epitaxial growth of P- and B-doped layers in gas-source Si molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.46917 ◽

1990 ◽

Vol 11 (1) ◽

pp. 18-20 ◽

Cited By ~ 9

Author(s):

H. Hirayama ◽

K. Koyama ◽

T. Tatsumi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Bipolar Transistor ◽

Selective Epitaxial Growth ◽

Gas Source ◽

Transistor Fabrication

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Growth condition dependence for GaAs selective epitaxial growth by molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/bf02657395 ◽

1989 ◽

Vol 18 (2) ◽

pp. 111-115 ◽

Cited By ~ 11

Author(s):

A. Okamoto ◽

K. Ohata

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Growth Condition ◽

Molecular Beam ◽

Condition Dependence ◽

Selective Epitaxial Growth

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Selective epitaxial growth of GaAs on Si with strained short-period superlattices by molecular beam epitaxy under atomic hydrogen irradiation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1736634 ◽

2004 ◽

Vol 22 (3) ◽

pp. 1428 ◽

Cited By ~ 6

Author(s):

Takuto Tsuji ◽

Hiroo Yonezu ◽

Naoki Ohshima

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Atomic Hydrogen ◽

Molecular Beam ◽

Selective Epitaxial Growth ◽

Gaas On Si ◽

Short Period ◽

Short Period Superlattices

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Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588866 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2381 ◽

Cited By ~ 30

Author(s):

Qi Xiang

Keyword(s):

Molecular Beam Epitaxy ◽

Mass Transport ◽

Epitaxial Growth ◽

Molecular Beam ◽

Selective Epitaxial Growth ◽

Gas Source

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