Longitudinal electric field effects on GaAs‐AlAs type‐II superlattices

1987 ◽  
Vol 51 (20) ◽  
pp. 1605-1607 ◽  
Author(s):  
G. Danan ◽  
F. R. Ladan ◽  
F. Mollot ◽  
R. Planel
2002 ◽  
Vol 66 (24) ◽  
Author(s):  
S. V. Zaitsev ◽  
A. A. Maksimov ◽  
P. S. Dorozhkin ◽  
V. D. Kulakovskii ◽  
I. I. Tartakovskii ◽  
...  

2020 ◽  
Vol 8 (1) ◽  
pp. 89-97 ◽  
Author(s):  
Bin Zhou ◽  
Shi-Jing Gong ◽  
Kai Jiang ◽  
Liping Xu ◽  
Liyan Shang ◽  
...  

A GaSe/GeS heterobilayer with a type-II band alignment and electric field modulated data storage.


2018 ◽  
Vol 6 (37) ◽  
pp. 10010-10019 ◽  
Author(s):  
Xueping Li ◽  
Guangrui Jia ◽  
Juan Du ◽  
Xiaohui Song ◽  
Congxin Xia ◽  
...  

InSe/MoSe2(WSe2) vdWHs with type-II alignment, effectively tuned by E-field and vertical strain, are systematically discussed for future applications in optoelectronic devices.


2021 ◽  
Vol 103 (14) ◽  
Author(s):  
Lina Chen ◽  
Yaoyu Gu ◽  
Kaiyuan Zhou ◽  
Zishuang Li ◽  
Liyuan Li ◽  
...  

2018 ◽  
Vol 58 (6-8) ◽  
pp. 465-470
Author(s):  
L. Valade ◽  
A. Ekedahl ◽  
P. Ghendrih ◽  
Y. Sarazin ◽  
Y. Asahi ◽  
...  

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