Degradation in GaAs/AlGaAs double‐heterostructure light‐emitting diodes

1987 ◽  
Vol 51 (23) ◽  
pp. 1949-1950 ◽  
Author(s):  
Junko Ogawa ◽  
Kohshi Tamamura ◽  
Katsuhiro Akimoto ◽  
Yoshifumi Mori
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature

2009 ◽  
Vol 31 (9) ◽  
pp. 1323-1326 ◽  
Author(s):  
Yoshikazu Terai ◽  
Takehiro Tokuno ◽  
Hideki Ichida ◽  
Yasuo Kanematsu ◽  
Yasufumi Fujiwara
Keyword(s):  
Low Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

Band‐gap enhanced carrier heating in InGaAsP/InP double heterostructure light‐emitting diodes

1982 ◽  
Vol 41 (10) ◽  
pp. 981-983 ◽  
Author(s):  
Osamu Wada ◽  
Shigenobu Yamakoshi ◽  
Teruo Sakurai
Keyword(s):  
Band Gap ◽  
Light Emitting Diodes ◽  
Carrier Heating ◽  
Light Emitting ◽  
Double Heterostructure

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

1997 ◽  
Vol 468 ◽  
Author(s):  
K. Yang ◽  
H. T. Shi ◽  
B. Shen ◽  
R. Zhang ◽  
Z. Z. Chen ◽  
...  
Keyword(s):  
Blue Light ◽  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Optical Emission ◽  
Emission Peak ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Current Voltage ◽  
Carrier Tunneling

ABSTRACTIn this paper, we studied the electrical and optical characteristics of Nichia double heterostructure blue light-emitting diodes, with In0.06Ga0.94N:Zn, Si active layer, at 77 and 300 K. Measurement of the forward bias current-voltage behavior of the device demonstrates a departure from the Shockley model of p-n diodes, and it is observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunneling. Electroluminescence experiments of the devices were performed. We obtained an emission peak located at 2.80 eV, and a relatively weaker short-wavelength peak of 3.2 eV. A significant blue shifts of the optical emission peak which is consistent with the tunneling character of electrical characteristics was observed. Furthermore, we studied the properties of electroluminescence under various pulsed currents, and a degradation in I-V characteristics and a low resistance ohmic short were observed.

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