Band‐gap enhanced carrier heating in InGaAsP/InP double heterostructure light‐emitting diodes

1982 ◽  
Vol 41 (10) ◽  
pp. 981-983 ◽  
Author(s):  
Osamu Wada ◽  
Shigenobu Yamakoshi ◽  
Teruo Sakurai
Keyword(s):  
Band Gap ◽  
Light Emitting Diodes ◽  
Carrier Heating ◽  
Light Emitting ◽  
Double Heterostructure

Degradation in GaAs/AlGaAs double‐heterostructure light‐emitting diodes

1987 ◽  
Vol 51 (23) ◽  
pp. 1949-1950 ◽  
Author(s):  
Junko Ogawa ◽  
Kohshi Tamamura ◽  
Katsuhiro Akimoto ◽  
Yoshifumi Mori
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

A supramolecular large band gap host for phosphorescent organic light-emitting diodes

RSC Advances ◽  
2013 ◽  
Vol 3 (12) ◽  
pp. 3829 ◽  
Author(s):  
Jie Zhang ◽  
Kai Zhang ◽  
Shengjian Liu ◽  
Aihui Liang ◽  
Xuelong Huang ◽  
...  
Keyword(s):  
Band Gap ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light

Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature

2009 ◽  
Vol 31 (9) ◽  
pp. 1323-1326 ◽  
Author(s):  
Yoshikazu Terai ◽  
Takehiro Tokuno ◽  
Hideki Ichida ◽  
Yasuo Kanematsu ◽  
Yasufumi Fujiwara
Keyword(s):  
Low Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

scholarly journals Quantum Dots and Applications

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 897
Author(s):  
Chang-Yeol Han ◽  
Hyun-Sik Kim ◽  
Heesun Yang
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Photovoltaic Cells ◽  
Core Shell ◽  
Special Issue ◽  
High Quality ◽  
Light Emitting ◽  
Size Dependent

It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.

Effect of Band Gap Offset on ZnO (Cd, Mg)/ZnO:P Multi Quantum Well Light Emitting Diodes: A Simulation Study

2014 ◽  
Vol 3 (2) ◽  
pp. 185-188 ◽  
Author(s):  
Amanpal Singh ◽  
B. C. Joshi ◽  
Dinesh Kumar ◽  
P. K. Khanna ◽  
Mukesh Kumar
Keyword(s):  
Quantum Well ◽  
Band Gap ◽  
Simulation Study ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Multi Quantum Well
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