Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenic

1987 ◽  
Vol 50 (11) ◽  
pp. 676-678 ◽  
Author(s):  
D. M. Speckman ◽  
J. P. Wendt
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Organometallic Chemical Vapor Deposition

Chemical vapor deposition growth of few-layer graphene for transparent conductive films

RSC Advances ◽  
2015 ◽  
Vol 5 (55) ◽  
pp. 44142-44148 ◽  
Author(s):  
Jun Pu ◽  
Lei Tang ◽  
Chaowei Li ◽  
Taotao Li ◽  
Lin Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Conductive Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene ◽  
Etching Effect

The facile and scalable technique is demonstrated, which grow graphene with controllable layers on copper foil substrates using the etching effect of H2 in atmospheric pressure chemical vapor deposition (APCVD).

Photoluminescent Properties of ZnO Layers Prepared by Organometallic Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
S. Bethke ◽  
H-C Pan ◽  
B. W. Wessels
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Deep Level ◽  
Chemical Vapor ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Emission ◽  
Deposition Conditions ◽  
Organometallic Chemical Vapor Deposition

ABSTRACTZnO layers have been heteroepitaxially deposited on sapphire using organometallic chemical vapor deposition at atmospheric pressure. The quality of the layers was assessed using photoluminescence spectroscopy at 16K. The layers exhibited strong ultraviolet near bandedge luminescence. The dependence of near bandedge and deep level photoluminescence emission on deposition conditions was examined.

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