Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon

1987 ◽  
Vol 50 (20) ◽  
pp. 1447-1449 ◽  
Author(s):  
W. R. Burger ◽  
R. Reif
Keyword(s):  
Low Temperature ◽  
Bipolar Transistors ◽  
Epitaxial Silicon

High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure

1991 ◽  
Vol 58 (17) ◽  
pp. 1896-1898 ◽  
Author(s):  
T. O. Sedgwick ◽  
P. D. Agnello ◽  
D. Nguyen Ngoc ◽  
T. S. Kuan ◽  
G. Scilla
Keyword(s):  
Low Temperature ◽  
Atmospheric Pressure ◽  
Epitaxial Silicon ◽  
Phosphorus Doping ◽  
High Phosphorus

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Low‐temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction bipolar transistors

1993 ◽  
Vol 63 (6) ◽  
pp. 809-811 ◽  
Author(s):  
Kai Zhang ◽  
Der‐Woei Wu ◽  
Jianming Fu ◽  
D. L. Miller ◽  
Mike Fukuda ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Base Material ◽  
Bipolar Transistors ◽  
Migration Enhanced Epitaxy
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