Comment on ‘‘Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition’’ [Appl. Phys. Lett. 49, 450 (1986)]
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1993 ◽
Vol 132
(3-4)
◽
pp. 414-418
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2005 ◽
Vol 8
(1-3)
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pp. 125-129
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