Analysis of temperature dependence of Hall mobility of nondoped and nitrogen‐doped β‐SiC single crystals grown by chemical vapor deposition

1988 ◽  
Vol 64 (5) ◽  
pp. 2818-2821 ◽  
Author(s):  
Akira Suzuki ◽  
Atsuko Ogura ◽  
Katsuki Furukawa ◽  
Yoshihisa Fujii ◽  
Mitsuhiro Shigeta ◽  
...  
2021 ◽  
Vol 6 (20) ◽  
pp. 4867-4873
Author(s):  
Bhagyashri Todankar ◽  
Pradeep Desai ◽  
Ajinkya K. Ranade ◽  
Tharangattu N. Narayanan ◽  
Masaki Tanemura ◽  
...  

2014 ◽  
Vol 21 (04) ◽  
pp. 1450055
Author(s):  
LIANG XIE ◽  
JIN ZHI ZHANG ◽  
NAI YI CUI ◽  
HONG GUANG ZHANG

Epitaxial CrO 2 (100)-oriented film was successfully fabricated on TiO 2 (100) substrate by a simple chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO 3 precursor. The transport measurements show that the CrO 2 film is metallic with a small residual resistivity 4 μΩ cm down to 0.6 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T) = ρ0 + AT2 exp (-Δ/T) over the range of 0.6–300 K with Δ = 123.6 K. The magnetization of the film becomes saturated in a relatively low field with a small coercive field. The temperature dependence of magnetization shows Bloch's T3/2 law and the slope of the curve suggests a critical wavelength of λΔ ~ 26.6 Å beyond which spin-flip scattering becomes important.


Sign in / Sign up

Export Citation Format

Share Document