Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films

1987 ◽  
Vol 50 (21) ◽  
pp. 1521-1523 ◽  
Author(s):  
Z E. Smith ◽  
V. Chu ◽  
K. Shepard ◽  
S. Aljishi ◽  
D. Slobodin ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Defect Densities

Determination of Hydrogen Density of States in Amorphous Silicon Using Fractional Evolution Experiments

1997 ◽  
Vol 467 ◽  
Author(s):  
A. J. Franz ◽  
W. B. Jackson ◽  
J. L. Gland
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Silicon Film ◽  
Mean Field ◽  
Frequency Factor ◽  
Silicon Films ◽  
Hydrogen Density ◽  
Heating And Cooling ◽  
Novel Method

ABSTRACTHydrogen plays an important role in the electronic behavior, structure and stability of amorphous silicon films. Therefore, determination of the hydrogen density of states (DOS) and correlation of the hydrogen DOS with the electronic film properties are important research goals. We have developed a novel method for determination of hydrogen DOS in silicon films, based on fractional evolution experiments. Fractional evolution experiments are performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate. The fractional evolution data can be analyzed using two complementary memods, the fixed frequency factor approach and Arrhenius analysis. Using a rigorous, mean-field evolution model, we demonstrate the applicability of the two approaches to obtaining the hydrogen DOS in silicon films. We further validate both methods by analyzing experimental fractional evolution data foran amorphous silicon carbide film. Both types of analysis yield a similar double peaked density of states for the a-Si:C:H:D film.

Determination of hydrogen concentration in amorphous silicon films by nuclear elastic scattering (NES) of 100 MeV 3He2+

1981 ◽  
Vol 38 (12) ◽  
pp. 1249-1251
Author(s):  
M. Iwami ◽  
T. Imura ◽  
A. Hiraki ◽  
T. Itahashi ◽  
T. Fukuda ◽  
...  
Keyword(s):  
Elastic Scattering ◽  
Amorphous Silicon ◽  
Hydrogen Concentration ◽  
Silicon Films

Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films

2002 ◽  
Vol 80 (7) ◽  
pp. 1159-1161 ◽  
Author(s):  
Sukti Hazra ◽  
Isao Sakata ◽  
Mitsuyuki Yamanaka ◽  
Eiichi Suzuki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Grain Model

scholarly journals Determination of thickness and optical constants of amorphous silicon films from transmittance data

2000 ◽  
Vol 77 (14) ◽  
pp. 2133-2135 ◽  
Author(s):  
M. Mulato ◽  
I. Chambouleyron ◽  
E. G. Birgin ◽  
J. M. Martı́nez
Keyword(s):  
Amorphous Silicon ◽  
Optical Constants ◽  
Silicon Films

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Gas Phase ◽  
Silicon Films ◽  
Ion Implanted
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