Fine crystalline grain model for the determination of the morphology of ultrathin amorphous silicon films

2002 ◽  
Vol 80 (7) ◽  
pp. 1159-1161 ◽  
Author(s):  
Sukti Hazra ◽  
Isao Sakata ◽  
Mitsuyuki Yamanaka ◽  
Eiichi Suzuki
1997 ◽  
Vol 467 ◽  
Author(s):  
A. J. Franz ◽  
W. B. Jackson ◽  
J. L. Gland

ABSTRACTHydrogen plays an important role in the electronic behavior, structure and stability of amorphous silicon films. Therefore, determination of the hydrogen density of states (DOS) and correlation of the hydrogen DOS with the electronic film properties are important research goals. We have developed a novel method for determination of hydrogen DOS in silicon films, based on fractional evolution experiments. Fractional evolution experiments are performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate. The fractional evolution data can be analyzed using two complementary memods, the fixed frequency factor approach and Arrhenius analysis. Using a rigorous, mean-field evolution model, we demonstrate the applicability of the two approaches to obtaining the hydrogen DOS in silicon films. We further validate both methods by analyzing experimental fractional evolution data foran amorphous silicon carbide film. Both types of analysis yield a similar double peaked density of states for the a-Si:C:H:D film.


1981 ◽  
Vol 38 (12) ◽  
pp. 1249-1251
Author(s):  
M. Iwami ◽  
T. Imura ◽  
A. Hiraki ◽  
T. Itahashi ◽  
T. Fukuda ◽  
...  

1987 ◽  
Vol 50 (21) ◽  
pp. 1521-1523 ◽  
Author(s):  
Z E. Smith ◽  
V. Chu ◽  
K. Shepard ◽  
S. Aljishi ◽  
D. Slobodin ◽  
...  

2000 ◽  
Vol 77 (14) ◽  
pp. 2133-2135 ◽  
Author(s):  
M. Mulato ◽  
I. Chambouleyron ◽  
E. G. Birgin ◽  
J. M. Martı́nez

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
F. J. Demond ◽  
G. Müller ◽  
H. Damjantschitsch ◽  
H. Mannsperger ◽  
S. Kalbitzer ◽  
...  

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