Optical characterization of InGaAs‐InAlAs strained‐layer superlattices grown by molecular beam epitaxy

1986 ◽  
Vol 49 (13) ◽  
pp. 794-796 ◽  
Author(s):  
Kenichi Nishi ◽  
Kazuyuki Hirose ◽  
Takashi Mizutani
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Strained Layer ◽  
Strained Layer Superlattices

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

1985 ◽  
Vol 47 (10) ◽  
pp. 1099-1101 ◽  
Author(s):  
L. Goldstein ◽  
F. Glas ◽  
J. Y. Marzin ◽  
M. N. Charasse ◽  
G. Le Roux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strained Layer ◽  
Strained Layer Superlattices

Growth of Ge1−xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy

2013 ◽  
Vol 64 ◽  
pp. 543-551 ◽  
Author(s):  
Shaojian Su ◽  
Dongliang Zhang ◽  
Guangze Zhang ◽  
Chunlai Xue ◽  
Buwen Cheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strained Layer ◽  
Strained Layer Superlattices

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Picosecond transient photoluminescence spectra of ZnSe‐ZnS strained‐layer superlattices grown on GaAs(001) by molecular beam epitaxy

1992 ◽  
Vol 61 (13) ◽  
pp. 1540-1542 ◽  
Author(s):  
Jie Cui ◽  
Hai‐Long Wang ◽  
Fu‐Xi Gan ◽  
Xu‐Guang Huang ◽  
Zhi‐Gang Cai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra ◽  
Strained Layer ◽  
Strained Layer Superlattices

Structural and optical characterization of alternately strained GaAs/GaP/GaAs/InP superlattices grown by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 623-626 ◽  
Author(s):  
A. Mazuelas ◽  
J. Meléndez ◽  
P.S. Domínguez ◽  
M. Garriga ◽  
C. Ballesteros ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Optical Characterization
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