Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs

1986 ◽  
Vol 48 (2) ◽  
pp. 160-162 ◽  
Author(s):  
Takafumi Yao ◽  
Toshihiko Takeda
Keyword(s):  
Growth Process ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Crystalline ◽  
Crystalline Films

In SituGravimetric Monitoring of the GaAs Growth Process in Atomic Layer Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 11A) ◽  
pp. L1847-L1849 ◽  
Author(s):  
Akinori Koukitu ◽  
Hitoshi Ikeda ◽  
Hiroshi Yasutake ◽  
Hisashi Seki
Keyword(s):  
Growth Process ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth process of Ge on Si(100)-(2×1)in atomic-layer epitaxy fromGe2H6

1997 ◽  
Vol 56 (8) ◽  
pp. 4878-4886 ◽  
Author(s):  
Kuang-Hsin Huang ◽  
Tsai-Shian Ku ◽  
Deng-Sung Lin
Keyword(s):  
Growth Process ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD

CrystEngComm ◽  
2019 ◽  
Vol 21 (12) ◽  
pp. 2009-2017 ◽  
Author(s):  
Mohd Nazri Abd Rahman ◽  
Noor Azrina Talik ◽  
Muhammad I. M. Abdul Khudus ◽  
Abdullah Fadil Sulaiman ◽  
Kamarul Allif ◽  
...  
Keyword(s):  
Flux Density ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Crystalline ◽  
Sapphire Substrates ◽  
Pulsed Atomic Layer Epitaxy ◽  
Ammonia Flux

A smooth and dense single-crystalline AlN was successfully grown by tailoring the flux density of ammonia.

Metalorganic Chemical Vapor Deposition of InP by Pulsing Precursors

1989 ◽  
Vol 160 ◽  
Author(s):  
W. K. Chen ◽  
J. C. Chen ◽  
L. Anthony ◽  
P. L. Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Growth Process ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Monolayer Growth ◽  
Metalorganic Chemical

AbstractWe have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass-transport-limited in the temperature range of 420 to 580 °C. It is kinetic-controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.

In situ monitoring of the GaAs growth process in halogen transport atomic layer epitaxy

1996 ◽  
Vol 163 (1-2) ◽  
pp. 180-186 ◽  
Author(s):  
Akinori Koukitu ◽  
Naoyuki Takahashi ◽  
Hisashi Seki
Keyword(s):  
Growth Process ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Atomic Layer Epitaxy

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution
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