Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy

1986 ◽  
Vol 48 (23) ◽  
pp. 1615-1616 ◽  
Author(s):  
Takafumi Yao ◽  
Toshihiko Takeda ◽  
Ryuji Watanuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Photoluminescence Properties ◽  
Single Crystalline ◽  
Crystalline Films

scholarly journals Large Area Free-Standing Single Crystalline Films of p-Quinquephenyl: Growth, Structure and Photoluminescence Properties

Crystals ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 363
Author(s):  
Valery A. Postnikov ◽  
Nataliya I. Sorokina ◽  
Maria S. Lyasnikova ◽  
Artem A. Kulishov ◽  
Alexey E. Voloshin ◽  
...  
Keyword(s):  
Photoluminescence Spectra ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
Large Area ◽  
Free Standing ◽  
Slow Cooling ◽  
Single Crystalline ◽  
X Ray ◽  
Growth Structure ◽  
Crystalline Films

Studies of the growth of large-area free-standing single-crystalline films of p-quinquephenyl are presented. High-quality crystals were grown by slow cooling of a hot chlorobenzene solution. Worse quality large-area free-standing single crystals of p-quinquephenyl were also grown by using physical vapor transport and used for comparison. The crystal structure of p-quinquephenyl at 293 K and 85 K was refined by single-crystal X-ray diffraction. The optical absorption and photoluminescence spectra of solutions and crystalline films were obtained and analyzed; a positive solvatochromic effect was detected.

Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD

CrystEngComm ◽  
2019 ◽  
Vol 21 (12) ◽  
pp. 2009-2017 ◽  
Author(s):  
Mohd Nazri Abd Rahman ◽  
Noor Azrina Talik ◽  
Muhammad I. M. Abdul Khudus ◽  
Abdullah Fadil Sulaiman ◽  
Kamarul Allif ◽  
...  
Keyword(s):  
Flux Density ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Crystalline ◽  
Sapphire Substrates ◽  
Pulsed Atomic Layer Epitaxy ◽  
Ammonia Flux

A smooth and dense single-crystalline AlN was successfully grown by tailoring the flux density of ammonia.

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

scholarly journals LPE Growth of Composite Thermoluminescent Detectors Based on the Lu3−xGdxAl5O12:Ce Single Crystalline Films and YAG:Ce Crystals

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 189 ◽  
Author(s):  
Sandra Witkiewicz-Lukaszek ◽  
Anna Mrozik ◽  
Vitalii Gorbenko ◽  
Tetiana Zorenko ◽  
Pawel Bilski ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Single Crystalline ◽  
Epitaxial Structure ◽  
Simultaneous Registration ◽  
Crystalline Films ◽  
Ionization Radiation ◽  
Growth Method ◽  
The Difference ◽  
Thermoluminescent Detectors

This work is dedicated to the development of new types of composite thermoluminescent (TL) detectors for simultaneous registration of the different components of ionization radiation based on the single crystalline films (SCFs) of Ce3+-doped Lu3−xGdxAl5O12:Ce (x = 0–1.5) garnet and Y3Al5O12:Ce (YAG:Ce) substrates using the liquid phase epitaxy (LPE) growth method. For this purpose, the TL properties of the mentioned epitaxial structures were examined in Risø TL/OSL-DA-20 reader under excitation by α- and β-particles from 242Am and 90Sr-90Y sources. We have shown that the cation engineering of SCF content can result in more significant separation of the TL glow curves of SCFs and substrates under α- and β-particle excitations in comparison with the prototype of such composite detectors based on the Lu3Al5O12:Ce (LuAG:Ce)/YAG:Ce epitaxial structure. Specifically, the difference between the TL glow curves of Lu1.5Gd1.5Al5O12:Ce SCFs and YAG:Ce substrates increases up to 120 K in comparison with a respective value of 80 degrees in the prototype based on the LuAG:Ce/YAG:Ce epitaxial structure. Therefore, the LPE-grown epitaxial structures containing Lu1.5Gd1.5Al5O12:Ce SCFs and Ce3+-doped YAG:Ce substrate can be successfully applied for simultaneous registration of α- and β-particles in mixed fluxes of ionization radiation.

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