Influence of the near‐band‐edge surface states on the luminescence efficiency of InP

1986 ◽  
Vol 48 (20) ◽  
pp. 1362-1364 ◽  
Author(s):  
J. M. Moison ◽  
M. Van Rompay ◽  
M. Bensoussan
Keyword(s):  
Surface States ◽  
Band Edge ◽  
Near Band Edge ◽  
Luminescence Efficiency ◽  
Edge Surface

Characterization of GaN Films on Sapphire by Cathodoluminescence

1996 ◽  
Vol 449 ◽  
Author(s):  
L.-L. Chao ◽  
G. S. Cargill ◽  
C. Kothandaraman
Keyword(s):  
Deep Level ◽  
Luminescent Properties ◽  
Deep Level Emission ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Luminescence Efficiency ◽  
Si Doped

ABSTRACTCathodoluminescence (CL) spectroscopy and microscopy were used to study the luminescent properties of a variety of GaN films, both Si-doped and unintentionally-doped, grown on sapphire substrates. A narrow and intense near band-edge emission was found in the CL spectrum of each film examined, and deep-level emission was also observed for some of the films. The luminescence efficiency of near band-edge emission increased with a faster rate than that of deep-level emission when the pumping current was increased. Spatial nonuniformities of luminescence were observed in monochromatic CL microscopy, and microstructures were observed in scanning electron microscopy. No correlations between luminescence features and microstructural features were seen. Degradation of near band-edge luminescence was observed, accompanied by growth of deep-level emission.

Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy

1995 ◽  
Vol 34 (Part 1, No. 1) ◽  
pp. 42-47 ◽  
Author(s):  
Gwo-Cherng Jiang ◽  
Yih Chang ◽  
Liann-Be Chang ◽  
Yung-Der Juang ◽  
SuLu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge

Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region

1996 ◽  
Vol 79 (11) ◽  
pp. 8682-8687 ◽  
Author(s):  
R. A. Hogg ◽  
K. Takahei ◽  
A. Taguchi
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Region ◽  
Photoluminescence Excitation

Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

2002 ◽  
Vol 91 (12) ◽  
pp. 9827 ◽  
Author(s):  
M. Germain ◽  
E. Kartheuser ◽  
A. L. Gurskii ◽  
E. V. Lutsenko ◽  
I. P. Marko ◽  
...  
Keyword(s):  
Chemical Shift ◽  
Band Edge ◽  
Near Band Edge ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

ChemInform Abstract: NEAR BAND-EDGE LUMINESCENCE IN ZINC SELENIDE GROWN FROM GALLIUM SOLUTION

1979 ◽  
Vol 10 (21) ◽  
Author(s):  
B. J. FITZPATRICK ◽  
R. N. BHARGAVA ◽  
S. P. HERKO ◽  
P. M. HARNACK
Keyword(s):  
Zinc Selenide ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

Irradiation Effects of60Co γ-Ray on the near Band-Edge Photoluminescence (PL) of ZnSe

1988 ◽  
Vol 27 (Part 1, No. 9) ◽  
pp. 1669-1673 ◽  
Author(s):  
Katsumi Mochizuki ◽  
Katashi Masumoto
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Irradiation Effects ◽  
Γ Ray

Recovering near-band-edge ultraviolet responses in a wide-bandgap oxide with dipole-forbidden bandgap transition

2015 ◽  
Vol 649 ◽  
pp. 625-629 ◽  
Author(s):  
Rui Deng ◽  
Yong-Feng Li ◽  
Bin Yao ◽  
Zhan-Hui Ding ◽  
Xuan Fang ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Band Edge ◽  
Near Band Edge
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