Roles of shallow and deep electron traps causing backgating in GaAs metal‐semiconductor field‐effect transistors

1986 ◽  
Vol 48 (14) ◽  
pp. 937-939 ◽  
Author(s):  
Ravi Khanna ◽  
Mukunda B. Das
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electron Traps

Correlation Between On/Off Ratio and Electron Traps in Hole-Only Carbon-Nanotube-Enabled Vertical Field Effect Transistors

2009 ◽  
Vol 1154 ◽  
Author(s):  
Mitchell Austin McCarthy ◽  
Bo Liu ◽  
Andrew Gabriel Rinzler
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Strong Dependence ◽  
Relative Number ◽  
Charge Trapping ◽  
Electron Traps ◽  
Vertical Field ◽  
Vertical Field Effect ◽  
Future Work

AbstractSingle wall carbon nanotube enabled vertical field effect transistors (VFETs) are studied and the dependence of the on/off ratio on the relative number of electron traps is investigated. Current versus voltage measurements on several VFETs with varying interfacial trap densities in the vicinity of the nanotube network/polymer active layer junction are taken. It is found that the on/off ratio of the VFET changes from 1600 to 20 for typical operational currents as the onset gate voltage in the off-to-on transfer curve shifts from 94 V to 72 V. Such a strong dependence on trapped charge motivates future work to uncover the mechanism of charge trapping.

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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