Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy

Sakae Zembutsu; Toru Sasaki

doi:10.1063/1.96643

Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.96643 ◽

1986 ◽

Vol 48 (13) ◽

pp. 870-872 ◽

Cited By ~ 30

Author(s):

Sakae Zembutsu ◽

Toru Sasaki

Keyword(s):

Single Crystal ◽

Vapor Phase ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Electron Cyclotron ◽

Single Crystal Films ◽

Crystal Films ◽

Resonance Plasma

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Low temperature growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(86)90309-x ◽

1986 ◽

Vol 77 (1-3) ◽

pp. 250-256 ◽

Cited By ~ 15

Author(s):

Sakae Zembutsu ◽

Toru Sasaki

Keyword(s):

Low Temperature ◽

Single Crystal ◽

Vapor Phase ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Metalorganic Vapor Phase Epitaxy ◽

Temperature Growth ◽

Single Crystal Films ◽

Crystal Films ◽

Resonance Plasma

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Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al2O3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions

Technical Physics Letters ◽

10.1134/s1063785013010069 ◽

2013 ◽

Vol 39 (1) ◽

pp. 51-54 ◽

Cited By ~ 2

Author(s):

Yu. N. Buzynin ◽

M. E. Viktorov ◽

A. V. Vodop’yanov ◽

S. V. Golubev ◽

M. N. Drozdov ◽

...

Keyword(s):

Vapor Phase ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Electron Cyclotron

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Growth of Al In1−N single crystal films by microwave-excited metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)00464-1 ◽

1995 ◽

Vol 146 (1-4) ◽

pp. 462-466 ◽

Cited By ~ 50

Author(s):

Qixin Guo ◽

Hiroshi Ogawa ◽

Akira Yoshida

Keyword(s):

Single Crystal ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Single Crystal Films ◽

Crystal Films

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Low temperature growth of GaN single crystal films using ECR plasma excited metalorganic vapor phase epitaxy.

Shinku ◽

10.3131/jvsj.30.116 ◽

1987 ◽

Vol 30 (3) ◽

pp. 116-122

Author(s):

Toru SASAKI ◽

Sakae ZEMBUTSU

Keyword(s):

Low Temperature ◽

Single Crystal ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Temperature Growth ◽

Low Temperature Growth ◽

Ecr Plasma ◽

Single Crystal Films ◽

Crystal Films

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Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy

Journal of Applied Physics ◽

10.1063/1.337929 ◽

1987 ◽

Vol 61 (7) ◽

pp. 2533-2540 ◽

Cited By ~ 147

Author(s):

Toru Sasaki ◽

Sakae Zembutsu

Keyword(s):

Single Crystal ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Orientation Dependence ◽

Vapor Phase Epitaxy ◽

Substrate Orientation ◽

Single Crystal Films ◽

Crystal Films

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Preparation of Bi4Ti3O12films on a single‐crystal sapphire substrate with electron cyclotron resonance plasma sputtering

Applied Physics Letters ◽

10.1063/1.104702 ◽

1991 ◽

Vol 58 (3) ◽

pp. 243-245 ◽

Cited By ~ 30

Author(s):

H. Masumoto ◽

T. Goto ◽

Y. Masuda ◽

A. Baba ◽

T. Hirai

Keyword(s):

Single Crystal ◽

Sapphire Substrate ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Single Crystal Sapphire ◽

Resonance Plasma

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Smooth etching of single crystal 6H‐SiC in an electron cyclotron resonance plasma reactor

Applied Physics Letters ◽

10.1063/1.111629 ◽

1994 ◽

Vol 64 (17) ◽

pp. 2315-2317 ◽

Cited By ~ 49

Author(s):

J. R. Flemish ◽

K. Xie ◽

J. H. Zhao

Keyword(s):

Single Crystal ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Reactor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

Applied Physics Letters ◽

10.1063/1.102487 ◽

1990 ◽

Vol 56 (15) ◽

pp. 1424-1426 ◽

Cited By ~ 52

Author(s):

S. J. Pearton ◽

U. K. Chakrabarti ◽

A. P. Kinsella ◽

D. Johnson ◽

C. Constantine

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effect of nitrogen flow on the properties of carbon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Vacuum ◽

10.1016/j.vacuum.2021.110223 ◽

2021 ◽

pp. 110223

Author(s):

Sixu Lin ◽

Dong Xie ◽

Yongliang Tang ◽

Yiwen Wang ◽

Fengjuan Jing ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Nitrogen Flow ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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X-ray photoelectron diffraction observation of β-SiC(001) obtained by electron cyclotron resonance plasma assisted growth on Si(001)

Applied Surface Science ◽

10.1016/0169-4332(93)90239-8 ◽

1993 ◽

Vol 68 (4) ◽

pp. 575-582 ◽

Cited By ~ 20

Author(s):

M. Diani ◽

J.L. Bischoff ◽

L. Kubler ◽

D. Bolmont

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

X Ray ◽

Photoelectron Diffraction ◽

Resonance Plasma

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