Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy

1987 ◽  
Vol 61 (7) ◽  
pp. 2533-2540 ◽  
Author(s):  
Toru Sasaki ◽  
Sakae Zembutsu
Keyword(s):  
Single Crystal ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Orientation Dependence ◽  
Vapor Phase Epitaxy ◽  
Substrate Orientation ◽  
Single Crystal Films ◽  
Crystal Films

Vapor phase epitaxial liftoff of GaAs and silicon single crystal films

1999 ◽  
Vol 58 (2) ◽  
pp. 141-146 ◽  
Author(s):  
W Chang ◽  
C.P Kao ◽  
G.A Pike ◽  
J.A Slone ◽  
E Yablonovitch
Keyword(s):  
Single Crystal ◽  
Vapor Phase ◽  
Silicon Single Crystal ◽  
Single Crystal Films ◽  
Crystal Films

The Orientation Dependence of the Electron Backscattering Coefficient of Gold Single Crystal Films

1974 ◽  
Vol 29 (6) ◽  
pp. 833-837 ◽  
Author(s):  
H. Drescher ◽  
E. R. Krefting ◽  
L. Reimer ◽  
H. Seidel
Keyword(s):  
Single Crystal ◽  
Wave Field ◽  
Cross Sections ◽  
Bloch Wave ◽  
Orientation Dependence ◽  
Primary Electron ◽  
Backscattering Coefficient ◽  
Single Crystal Films ◽  
Low Energies ◽  
Crystal Films

A theory is developed for calculating the orientation dependence of the backscattering coefficient of single crystal films. Three contributions are calculated separately; firstly the direct Lackscattering out of the Bloch wave field, secondly the backscattering of electrons scattered out of the wave field into angles smaller than 90° and thirdly the remaining fraction of electrons scattered into very small angles. The electron diffusion is considered by Monte-Carlo calculations. The results are approximated by simple analytical formulas for computation. The theory is compared with experiments on gold single crystal films on a mica substrate. For primary electron energies below 6 keV, a decrease of the orientation anisotropy of backscattering is observed with decreasing energy, whereas Si and Ge single crystals show a further increase. This decrease agrees with numerical calculations using cross sections for low energies.

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