Schottky barrier formation on electron beam deposited amorphous Si1−xGex: H alloys and amorphous (Si/Si1−xGex): H modulated structures

1986 ◽  
Vol 48 (6) ◽  
pp. 408-410 ◽  
Author(s):  
A. Christou ◽  
P. Tzanetakis ◽  
Z. Hatzopoulos ◽  
G. Kyriakidis ◽  
W. Tseng ◽  
...  
Keyword(s):  
Electron Beam ◽  
Schottky Barrier ◽  
Barrier Formation ◽  
Modulated Structures ◽  
Amorphous Si

Schottky Barrier Formation on Electron Beam Deposited Amorphous Si1−xGex:H alloys and Amorphous (Si/Si1−xGex):H Modulated Structures

1985 ◽  
Vol 54 ◽  
Author(s):  
A. Christou ◽  
P. Tzanetakis ◽  
Z. Hatzopoulos ◽  
G. Kiriakidis
Keyword(s):  
Electron Beam ◽  
Barrier Height ◽  
Deep Level ◽  
Negative Resistance ◽  
Ion Source ◽  
Schottky Barriers ◽  
Fermi Level Pinning ◽  
Barrier Formation ◽  
Modulated Structures ◽  
Amorphous Si

ABSTRACTAmorphous Si:H and Si1−xGex:H films were prepared by mixing electron beam evaporated silicon with a molecular beam of germanium from a Knudsen cell and with a beam of ionized hydrogen produced by a 0–3 keV ion source. Aluminum Schottky barriers on two types of samples: (1) a-Si1−xGex:H with.15<×<.85 and (2) modulated structures of 50 × 100 Å layers of a-Si:H/a-Si.8Ge.2:H (10-5 Torr PH hydrogen) were investigated. Barrier height was found to depend on the Ge concentration and possible Fermi-level pinning due to the dangling bond deep level. The modulated structures showed a negative resistance region and a barrier height determined only by the composition of the first layer.

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

1991 ◽  
Vol 58 (20) ◽  
pp. 2243-2245 ◽  
Author(s):  
Masao Yamada ◽  
Anita K. Wahi ◽  
Paul L. Meissner ◽  
Alberto Herrera‐Gomez ◽  
Tom Kendelewicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation

Deposition of Ag ions and neutral atoms on ZnSe(100): Influence of interface morphology on Schottky-barrier formation

1990 ◽  
Vol 41 (2) ◽  
pp. 991-994 ◽  
Author(s):  
M. Vos ◽  
C. M. Aldao ◽  
D. J. W. Aastuen ◽  
J. H. Weaver
Keyword(s):  
Schottky Barrier ◽  
Interface Morphology ◽  
Neutral Atoms ◽  
Barrier Formation

Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces

1990 ◽  
Vol 64 (21) ◽  
pp. 2551-2554 ◽  
Author(s):  
S. Chang ◽  
L. J. Brillson ◽  
Y. J. Kime ◽  
D. S. Rioux ◽  
P. D. Kirchner ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation

Chemical reaction and Schottky-barrier formation at the Ir/Si interface

1987 ◽  
Vol 35 (17) ◽  
pp. 9073-9084 ◽  
Author(s):  
M. Wittmer ◽  
P. Oelhafen ◽  
K. N. Tu
Keyword(s):  
Schottky Barrier ◽  
Chemical Reaction ◽  
Barrier Formation

Schottky barrier formation in the low metal coverage limit

1993 ◽  
Vol 42 (1-4) ◽  
pp. 281-295 ◽  
Author(s):  
F. Flores ◽  
R. Rincón ◽  
J. Ortega ◽  
F.J. García-Vidal ◽  
R. Pérez
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation
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