A photoluminescence study of molecular beam epitaxy grown CdTe films on (001)InSb substrates

1985 ◽  
Vol 47 (1) ◽  
pp. 24-25 ◽  
Author(s):  
Z. C. Feng ◽  
A. Mascarenhas ◽  
W. J. Choyke ◽  
R. F. C. Farrow ◽  
F. A. Shirland ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Study ◽  
Cdte Films

Properties of doped CdTe films grown by photoassisted molecular‐beam epitaxy

1988 ◽  
Vol 6 (4) ◽  
pp. 2821-2825 ◽  
Author(s):  
S. Hwang ◽  
R. L. Harper ◽  
K. A. Harris ◽  
N. C. Giles ◽  
R. N. Bicknell ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cdte Films

Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Nano Futures ◽  
2021 ◽  
Vol 5 (4) ◽  
pp. 045005
Author(s):  
Koichi Murata ◽  
Shuhei Yagi ◽  
Takashi Kanazawa ◽  
Satoshi Tsubomatsu ◽  
Christopher Kirkham ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Electric Transport ◽  
Photoluminescence Study ◽  
Post Annealing ◽  
Surface Nanostructures ◽  
Doping Technique ◽  
Dopant Source

Abstract Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.

Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

2006 ◽  
Vol 88 (21) ◽  
pp. 213106 ◽  
Author(s):  
John B. Schlager ◽  
Norman A. Sanford ◽  
Kris A. Bertness ◽  
Joy M. Barker ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Study ◽  
Gan Nanowires ◽  
Catalyst Free
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