Tunneling currents and two‐body effects in quantum well and superlattice structures

1985 ◽  
Vol 47 (2) ◽  
pp. 172-174 ◽  
Author(s):  
D. D. Coon ◽  
H. C. Liu
Keyword(s):  
Quantum Well ◽  
Tunneling Currents ◽  
Superlattice Structures

Elastic-relaxation-induced barrier layer thickness undulations in InP/GaAs type-II quantum well superlattice structures

2012 ◽  
Vol 27 (10) ◽  
pp. 105031 ◽  
Author(s):  
S D Singh ◽  
Ravi Kumar ◽  
C Mukherjee ◽  
Pushpen Mondal ◽  
A K Srivastava ◽  
...  
Keyword(s):  
Quantum Well ◽  
Layer Thickness ◽  
Barrier Layer ◽  
Type Ii ◽  
Barrier Layer Thickness ◽  
Superlattice Structures

Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes

2002 ◽  
Vol 23 (9) ◽  
pp. 535-537 ◽  
Author(s):  
X.A. Cao ◽  
E.B. Stokes ◽  
P.M. Sandvik ◽  
S.F. LeBoeuf ◽  
J. Kretchmer ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Tunneling Currents

Enhanced Interdiffusion Effects in Compound Semiconductors

1987 ◽  
Vol 104 ◽  
Author(s):  
P. M. Petroff
Keyword(s):  
Quantum Well ◽  
Compound Semiconductors ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Superlattice Structures ◽  
Interdiffusion Kinetics

ABSTRACTThis paper reviews the principal processes involved in the enhanced interdiffusion of elements across interfaces between two III-V compound semiconductors. Implantation enhanced interdiffusion effects in GaAs-Gal−xAlxAs are compared for single Quantum Well structures and Superlattice structures. Measurements indicate a marked difference in the annealing and enhanced interdiffusion kinetics between these 2 types of structures.

MOCVD growth of InxGa1−xAs/GaAs multiple quantum well and superlattice structures for optical modulators

1998 ◽  
Vol 42 (2) ◽  
pp. 263-267 ◽  
Author(s):  
S Hasenöhrl ◽  
M Kučera ◽  
J Novák ◽  
M Bujdák ◽  
P Eliáš ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Mocvd Growth ◽  
Superlattice Structures

Highly-sensitive Hall element with quantum-well superlattice structures

1989 ◽  
Vol 95 (1-4) ◽  
pp. 394-397 ◽  
Author(s):  
Y. Sugiyama ◽  
H. Soga ◽  
M. Tacano
Keyword(s):  
Quantum Well ◽  
Highly Sensitive ◽  
Superlattice Structures ◽  
Hall Element
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