Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy

1985 ◽  
Vol 47 (3) ◽  
pp. 301-303 ◽  
Author(s):  
Bernard Jusserand ◽  
François Alexandre ◽  
Daniel Paquet ◽  
Guy Le Roux
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Short Period ◽  
Short Period Superlattices

Raman scattering in GaP/AlP short-period superlattices grown by gas source molecular beam epitaxy

1992 ◽  
Vol 60-61 ◽  
pp. 553-558 ◽  
Author(s):  
R.K. Soni ◽  
H. Asahi ◽  
S. Emura ◽  
T. Watanabe ◽  
K. Asami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Gas Source ◽  
Short Period ◽  
Short Period Superlattices

Gas source molecular beam epitaxy and X-ray absorption fine structure characterization of InGaAs/InP short period superlattices

1994 ◽  
Vol 136 (1-4) ◽  
pp. 287-292 ◽  
Author(s):  
Teruo Mozume ◽  
Hideo Kashima ◽  
Kazuhiko Hosomi ◽  
Kiyoshi Ogata ◽  
Kazuhumi Suenaga ◽  
...  
Keyword(s):  
Fine Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structure Characterization ◽  
X Ray ◽  
Gas Source ◽  
Short Period ◽  
Short Period Superlattices ◽  
X Ray Absorption

Photoluminescence Fatigue in Laterally-Ordered (GaP)2/(InP)2 Short-Period-Superlattices (SPS) Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 325 ◽  
Author(s):  
X. C. Liu ◽  
S. Q. Gu ◽  
E. E. Reuter ◽  
S. G. Bishop ◽  
A. C. Chen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Lower Energy ◽  
Molecular Beam ◽  
Continuous Illumination ◽  
Exciting Light ◽  
Quantum Well Structures ◽  
Short Period ◽  
Short Period Superlattices

AbstractSpontaneously laterally ordered (GaP)2/(InP)2 short period superlattices (SPS) grown by Molecular Beam Epitaxy (MBE) on nominal (100) GaAs substrates have been studied by photoluminescence (PL) spectroscopy. The samples studied included SPS comprising 110 pairs of (GaP)2/(InP)2 (total thickness σ90 nm) and multiquantum well structures in which quantum wells comprising 12 pairs of (GaP)2/(InP)2 SPS layers (thickness σ10 nm) are alternated with lattice-matched GaInP random alloy barrier layers. The 5K PL spectra include a σ1760 meV nearband edge band, and a much broader, lower energy (σ1670 meV) luminescence band that exhibits an unusual fatiguing behavior; its intensity diminishes monotonically during continuous illumination by the exciting light. This fatigued PL state is metastable at low temperatures. In the quantum well structure, although the relative intensity of the lower energy band is significantly weaker in comparison to the higher one, the fatiguing behavior still exists. However the fatiguing rate is slower in quantum well structures than that observed in the thick SPS film.

Double Periodicity Formation in EuTe/PbTe Superlattices

1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.

Strain-dependent morphology of spontaneous lateral composition modulations in (AlAs)m(InAs)n short-period superlattices grown by molecular beam epitaxy

1998 ◽  
Vol 73 (13) ◽  
pp. 1844-1846 ◽  
Author(s):  
A. G. Norman ◽  
S. P. Ahrenkiel ◽  
H. Moutinho ◽  
M. M. Al-Jassim ◽  
A. Mascarenhas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Short Period ◽  
Short Period Superlattices ◽  
Strain Dependent

scholarly journals Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

2010 ◽  
Vol 96 (2) ◽  
pp. 021904 ◽  
Author(s):  
E. Luna ◽  
B. Satpati ◽  
J. B. Rodriguez ◽  
A. N. Baranov ◽  
E. Tournié ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Short Period ◽  
Short Period Superlattices

Strain Relaxation Process of(InAs)m(GaAs)nStrained Short-Period Superlattices Grown by Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5617-5622 ◽  
Author(s):  
Takahiro Kawai ◽  
Hiroo Yonezu ◽  
Daishiro Saito ◽  
Mikihiro Yokozeki ◽  
Kangsa Pak
Keyword(s):  
Molecular Beam Epitaxy ◽  
Relaxation Process ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Short Period ◽  
Short Period Superlattices
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