Monolithic integration of AlGaAs/GaAs laser and external mirrors

1985 ◽  
Vol 46 (9) ◽  
pp. 806-808 ◽  
Author(s):  
J. Berger ◽  
D. Fekete
Keyword(s):  
Monolithic Integration ◽  
Gaas Laser

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

Monolithic Integration of GaN-micro-LED and Si-MOSFET for Bio-application

2019 ◽  
pp. 649
Author(s):  
Hiroto Sekiguchi ◽  
Hiroki Yasunaga ◽  
Kazuaki Tsuchiyama ◽  
Keisuke Yamane ◽  
Hiroshi Okada ◽  
...  
Keyword(s):  
Monolithic Integration

Erratum: Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off

1990 ◽  
Vol 26 (16) ◽  
pp. 1324
Author(s):  
I. Pollentier ◽  
L. Buydens ◽  
A. Ackaert ◽  
P. Demeester ◽  
P. van Daele ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Strained Layer ◽  
Gaas Mesfet ◽  
Lift Off

Monolithic integration of InGaAsp/Inp lasers and heterostructure bipolar transistors by selective area epitaxy

1993 ◽  
Vol 29 (8) ◽  
pp. 645 ◽  
Author(s):  
X. An ◽  
H. Temkin ◽  
A. Feygenson ◽  
R.A. Hamm ◽  
M.A. Cotta ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Selective Area Epitaxy ◽  
Selective Area

Monolithic integration of high-Q wedge resonators with vertically coupled waveguides

2013 ◽  
Author(s):  
Fernando Ramiro-Manzano ◽  
Nikola Prtljaga ◽  
Lorenzo Pavesi ◽  
Georg Pucker ◽  
Mher Ghulinyan
Keyword(s):  
Monolithic Integration ◽  
High Q ◽  
Coupled Waveguides

scholarly journals Vertical monolithic integration of wide- and narrow-bandgap semiconductor nanostructures on graphene films

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Youngbin Tchoe ◽  
Janghyun Jo ◽  
HoSung Kim ◽  
Heehun Kim ◽  
Hyeonjun Baek ◽  
...  
Keyword(s):  
Graphene Film ◽  
Monolithic Integration ◽  
Hybrid Nanostructures ◽  
Dual Wavelength ◽  
Multilayer Graphene ◽  
Graphene Films ◽  
Transmission Electron ◽  
Zno Nanotubes ◽  
Metal Organic ◽  
Hybrid Configuration

AbstractWe report monolithic integration of indium arsenide (InAs) nanorods and zinc oxide (ZnO) nanotubes using a multilayer graphene film as a suspended substrate, and the fabrication of dual-wavelength photodetectors with the hybrid configuration of these materials. For the hybrid nanostructures, ZnO nanotubes and InAs nanorods were grown vertically on the top and bottom surfaces of the graphene films by metal-organic vapor-phase epitaxy and molecular beam epitaxy, respectively. The structural, optical, and electrical characteristics of the hybrid nanostructures were investigated using transmission electron microscopy, spectral photoresponse analysis, and current–voltage measurements. Furthermore, the hybrid nanostructures were used to fabricate dual-wavelength photodetectors sensitive to both ultraviolet and mid-infrared wavelengths.

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