Far‐field supermode patterns of a multiple‐stripe quantum well heterostructure laser operated (∼7330 Å, 300 K) in an external grating cavity

1984 ◽  
Vol 45 (4) ◽  
pp. 406-408 ◽  
Author(s):  
J. E. Epler ◽  
N. Holonyak ◽  
R. D. Burnham ◽  
T. L. Paoli ◽  
W. Streifer
Keyword(s):  
Quantum Well ◽  
Far Field ◽  
Heterostructure Laser

Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1750-L1752 ◽  
Author(s):  
Ayumu Tsujimura ◽  
Shigeo Yoshii ◽  
Shigeo Hayashi ◽  
Kazuhiro Ohkawa ◽  
Tsuneo Mitsuyu
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser

Fabrication of narrow far-field InGaAs-InAlGaAs broad-area lasers using quantum well intermixed extended cavities

1998 ◽  
Author(s):  
O.P. Kowalski ◽  
C.J. Hamilton ◽  
S.D. McDougall ◽  
B. Vogele ◽  
J.H. Marsh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Far Field ◽  
Broad Area ◽  
Broad Area Lasers

Native‐oxide coupled‐cavity AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes

1991 ◽  
Vol 59 (22) ◽  
pp. 2838-2840 ◽  
Author(s):  
N. El‐Zein ◽  
F. A. Kish ◽  
N. Holonyak ◽  
A. R. Sugg ◽  
M. J. Ries ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Native Oxide ◽  
Heterostructure Laser ◽  
Coupled Cavity

Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

2017 ◽  
Vol 110 (6) ◽  
pp. 061104 ◽  
Author(s):  
Xin Yan ◽  
Wei Wei ◽  
Fengling Tang ◽  
Xi Wang ◽  
Luying Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser ◽  
Gaas Nanowire ◽  
Low Threshold

Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure

1996 ◽  
Vol 8 (12) ◽  
pp. 1588-1590 ◽  
Author(s):  
Gray Lin ◽  
Shun-Tung Yen ◽  
Chien-Ping Lee ◽  
Der-Cherng Liu
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Far Field

Thin upper‐confining layer AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes

1993 ◽  
Vol 62 (9) ◽  
pp. 1006-1008 ◽  
Author(s):  
S. J. Caracci ◽  
F. A. Kish ◽  
M. R. Krames ◽  
M. J. Ries ◽  
N. Holonyak ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Heterostructure Laser

Planar single‐facet teardrop‐shaped AlxGa1−xAs‐GaAs quantum well heterostructure laser

1993 ◽  
Vol 63 (13) ◽  
pp. 1818-1820 ◽  
Author(s):  
S. J. Caracci ◽  
M. R. Krames ◽  
M. J. Ries ◽  
N. Holonyak
Keyword(s):  
Quantum Well ◽  
Heterostructure Laser

Far-field, efficiency and loss of 980 nm InGaAs/GaInAsP/GaInP SCH quantum well lasers

1997 ◽  
Vol 33 (6) ◽  
pp. 489 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
J. Nappi ◽  
K. Smekalin ◽  
P. Savolainen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Far Field ◽  
Field Efficiency

Long wavelength (λ∼1.5 μm) native‐oxide‐defined InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes

1994 ◽  
Vol 75 (5) ◽  
pp. 2706-2708 ◽  
Author(s):  
S. J. Caracci ◽  
M. R. Krames ◽  
N. Holonyak ◽  
M. J. Ludowise ◽  
A. Fischer‐Colbrie
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Native Oxide ◽  
Long Wavelength ◽  
Heterostructure Laser
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