Far-field, efficiency and loss of 980 nm InGaAs/GaInAsP/GaInP SCH quantum well lasers

1997 ◽  
Vol 33 (6) ◽  
pp. 489 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
J. Nappi ◽  
K. Smekalin ◽  
P. Savolainen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Far Field ◽  
Field Efficiency

Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure

1996 ◽  
Vol 8 (12) ◽  
pp. 1588-1590 ◽  
Author(s):  
Gray Lin ◽  
Shun-Tung Yen ◽  
Chien-Ping Lee ◽  
Der-Cherng Liu
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Far Field

Near‐ and far‐field observations of transient behavior in pulsed graded barrier quantum well lasers

1986 ◽  
Vol 60 (7) ◽  
pp. 2613-2615 ◽  
Author(s):  
L. J. Mawst ◽  
M. E. Givens ◽  
C. A. Zmudzinski ◽  
M. A. Emanuel ◽  
J. J. Coleman
Keyword(s):  
Quantum Well ◽  
Transient Behavior ◽  
Quantum Well Lasers ◽  
Far Field ◽  
Field Observations

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers
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